Effect of Post Annealing on La_{0.7}Sr_{0.3}MnO_3 Thin Films

• Authors: W. Cheng , C. Leung
• Languages of publication: EN

Abstracts

EN

The stability of La_{0.7}Sr_{0.3}MnO_3 thin films fabricated by pulsed laser deposition, under different annealing procedures, was investigated. La_{0.7}Sr_{0.3}MnO_3 films were deposited on (100) LaAlO_3 substrates at 650ºC with the films thickness from 20 to 50 nm. The oxygen pressures used to fabricate the films were 150 mTorr and 100 mTorr. Then in situ annealing steps were performed at 100 and 150 mTorr, respectively. Curie temperatures (T_c) of the films were estimated from the peaks of the temperature dependent resistance data. For the films deposited at 100 mTorr and annealed at 150 mTorr, T_c slightly dropped for short annealing time and recovered to 360 K for 30 min annealing. For the films deposited at 100 mTorr and annealed at 150 mTorr, it maintained semiconducting behavior without transition after annealing up to 30 minutes. For ex situ post annealing, it was found that the T_c of the films strongly depended on the annealing procedures.

Keywords

EN

75.30.-m; 73.50.-h

Discipline

• 73.50.-h: Electronic transport phenomena in thin films(for electronic transport in mesoscopic systems, see 73.23.-b; see also 73.40.-c Electronic transport in interface structures; for electronic transport in nanoscale materials and structures, see 73.63.-b)
• 75.30.-m: Intrinsic properties of magnetically ordered materials(for critical point effects, see 75.40.-s; for magnetotransport phenomena, see 75.47.-m)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2007
• Volume: 111
• Issue: 1
• Pages: 117-122

Dates

published

2007-01

received

2006-09-04

Contributors

author

W. Cheng

• Department of Applied Physics, the Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, People's Republic of China

author

C. Leung

• Department of Applied Physics, the Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, People's Republic of China

References

• 1. B. Nadgorny, I.I. Mazin, M. Osofsky, R.J. Soulen, Jr., P. Broussard, R.M. Stroud, D.J. Singh, V.G. Harris, A. Arsenov, Ya. Mukovskii, Phys. Rev. B, 63, 184433, 2001
• 2. C. Zener, Phys. Rev., 82, 403, 1955
• 3. P.W. Anderson, H. Hasegawa, Phys. Rev., 100, 675, 1955
• 4. Joonghoe Dho, N.H. Hur, J. Appl. Phys., 94, 7670, 2003
• 5. J.Z. Sun, D.W. Abraham, R.A. Rao, C.B. Eom, Appl. Phys. Lett., 74, 3017, 1999
• 6. Y.S. Du, B. Wang, T. Li, D.B. Yu, H. Yan, J. Magn. Magn. Mater., 297, 88, 2006
• 7. J.R. Sun, H.W. Yeung, H.K.Wong, T. Zhu, B.G. Shen, Eur. Phys. J. B, 35, 481, 2003

Identifiers

DOI

10.12693/APhysPolA.111.117