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2007 | 111 | 1 | 117-122
Article title

Effect of Post Annealing on La_{0.7}Sr_{0.3}MnO_3 Thin Films

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EN
Abstracts
EN
The stability of La_{0.7}Sr_{0.3}MnO_3 thin films fabricated by pulsed laser deposition, under different annealing procedures, was investigated. La_{0.7}Sr_{0.3}MnO_3 films were deposited on (100) LaAlO_3 substrates at 650ÂșC with the films thickness from 20 to 50 nm. The oxygen pressures used to fabricate the films were 150 mTorr and 100 mTorr. Then in situ annealing steps were performed at 100 and 150 mTorr, respectively. Curie temperatures (T_c) of the films were estimated from the peaks of the temperature dependent resistance data. For the films deposited at 100 mTorr and annealed at 150 mTorr, T_c slightly dropped for short annealing time and recovered to 360 K for 30 min annealing. For the films deposited at 100 mTorr and annealed at 150 mTorr, it maintained semiconducting behavior without transition after annealing up to 30 minutes. For ex situ post annealing, it was found that the T_c of the films strongly depended on the annealing procedures.
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Contributors
author
  • Department of Applied Physics, the Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, People's Republic of China
author
  • Department of Applied Physics, the Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, People's Republic of China
References
  • 1. B. Nadgorny, I.I. Mazin, M. Osofsky, R.J. Soulen, Jr., P. Broussard, R.M. Stroud, D.J. Singh, V.G. Harris, A. Arsenov, Ya. Mukovskii, Phys. Rev. B, 63, 184433, 2001
  • 2. C. Zener, Phys. Rev., 82, 403, 1955
  • 3. P.W. Anderson, H. Hasegawa, Phys. Rev., 100, 675, 1955
  • 4. Joonghoe Dho, N.H. Hur, J. Appl. Phys., 94, 7670, 2003
  • 5. J.Z. Sun, D.W. Abraham, R.A. Rao, C.B. Eom, Appl. Phys. Lett., 74, 3017, 1999
  • 6. Y.S. Du, B. Wang, T. Li, D.B. Yu, H. Yan, J. Magn. Magn. Mater., 297, 88, 2006
  • 7. J.R. Sun, H.W. Yeung, H.K.Wong, T. Zhu, B.G. Shen, Eur. Phys. J. B, 35, 481, 2003
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv111n114kz
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