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Abstracts
In this paper we report the results of synthesis and study of both ceramic samples and thin films of electronically doped La_{0.7}Pr_{0.3}MnO_3 and related heterostructures composed of La_{0.7}Pr_{0.3}MnO_3 and p-type La_{0.67}Ca_{0.33}MnO_3. The ceramic La_{0.7}Pr_{0.3}MnO_3 samples were prepared by a conventional solid state reaction technique. Single phase La_{0.7}Pr_{0.3}MnO_3 thin films and La_{0.7}Pr_{0.3}MnO_3/La_{0.67} Ca_{0.33}MnO_3 heterostructures were grown on lattice-matched perovskite NdGaO_3 substrates by pulsed laser deposition. Electron doping was indicated both for ceramic La_{0.7}Pr_{0.3}MnO_3 samples and thin films from thermopower data. Both ceramic samples and thin films of La_{0.7}Pr_{0.3}MnO_3 demonstrated resistivity of about 10 mΩ cm at 300 K and semiconductor-like resistance vs. temperature behavior with cooling down to 78 K. Meanwhile, the resistance of the La_{0.7}Pr_{0.3}MnO_3/La_{0.67}Ca_{0.33}MnO_3 interface showed an anomalous peak at 185 K. A series of post-deposition annealing experiments demonstrated a crucial role of annealing temperature and ambience on both electrical and magnetic properties of La_{0.7}Pr_{0.3}MnO_3 material and the heterostructures.
Discipline
- 75.70.-i: Magnetic properties of thin films, surfaces, and interfaces(for magnetic properties of nanostructures, see 75.75.-c)
- 71.30.+h: Metal-insulator transitions and other electronic transitions
- 73.50.-h: Electronic transport phenomena in thin films(for electronic transport in mesoscopic systems, see 73.23.-b; see also 73.40.-c Electronic transport in interface structures; for electronic transport in nanoscale materials and structures, see 73.63.-b)
Journal
Year
Volume
Issue
Pages
111-115
Physical description
Dates
published
2007-01
received
2006-09-04
Contributors
author
- Semiconductor Physics Institute, A. Goštauto 11, Vilnius, 01108 Lithuania
author
- Semiconductor Physics Institute, A. Goštauto 11, Vilnius, 01108 Lithuania
author
- Semiconductor Physics Institute, A. Goštauto 11, Vilnius, 01108 Lithuania
author
- Semiconductor Physics Institute, A. Goštauto 11, Vilnius, 01108 Lithuania
author
- Semiconductor Physics Institute, A. Goštauto 11, Vilnius, 01108 Lithuania
author
- Semiconductor Physics Institute, A. Goštauto 11, Vilnius, 01108 Lithuania
References
- 1. P. Duan, Z. Chen, S. Dai, Y. Zhou, H. Lu, K. Jin, B. Cheng, Appl. Phys. Lett., 84, 4741, 2004
- 2. P. Mandal, S. Das, Phys. Rev. B, 56, 15073, 1997
- 3. C. Mitra, P. Raychaudhuri, G. Kobernik, K. Dorr, K.H. Muller, L. Schultz, R. Pinto, Appl. Phys. Lett., 79, 2408, 2001
- 4. R. Butkute, J. Devenson, M.A. Rosa, A.K. Oginskis, F. Anisimovas, A. Vailionis, B. Vengalis, Lithuanian J. Phys., 46, 89, 2006
- 5. B. Vengalis, J. Devenson, K. Sliuziene, R. Butkute, M.A. Rosa, V. Lisauskas, A.K. Oginskis, F. Anisimovas, Thin Solid Films, 515, 599, 2006
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv111n113kz