Synthesis and Electrical Properties of La-Pr-Mn-O Thin Films and Heterostructures

• Authors: R. Butkutė , F. Anisimovas , A. Oginskis , A. Steikūnienė , J. Devenson , B. Vengalis
• Languages of publication: EN

Abstracts

EN

In this paper we report the results of synthesis and study of both ceramic samples and thin films of electronically doped La_{0.7}Pr_{0.3}MnO_3 and related heterostructures composed of La_{0.7}Pr_{0.3}MnO_3 and p-type La_{0.67}Ca_{0.33}MnO_3. The ceramic La_{0.7}Pr_{0.3}MnO_3 samples were prepared by a conventional solid state reaction technique. Single phase La_{0.7}Pr_{0.3}MnO_3 thin films and La_{0.7}Pr_{0.3}MnO_3/La_{0.67} Ca_{0.33}MnO_3 heterostructures were grown on lattice-matched perovskite NdGaO_3 substrates by pulsed laser deposition. Electron doping was indicated both for ceramic La_{0.7}Pr_{0.3}MnO_3 samples and thin films from thermopower data. Both ceramic samples and thin films of La_{0.7}Pr_{0.3}MnO_3 demonstrated resistivity of about 10 mΩ cm at 300 K and semiconductor-like resistance vs. temperature behavior with cooling down to 78 K. Meanwhile, the resistance of the La_{0.7}Pr_{0.3}MnO_3/La_{0.67}Ca_{0.33}MnO_3 interface showed an anomalous peak at 185 K. A series of post-deposition annealing experiments demonstrated a crucial role of annealing temperature and ambience on both electrical and magnetic properties of La_{0.7}Pr_{0.3}MnO_3 material and the heterostructures.

Keywords

EN

75.70.-i; 71.30.+h; 73.50.-h; 75.70.Pa

Discipline

• 75.70.-i: Magnetic properties of thin films, surfaces, and interfaces(for magnetic properties of nanostructures, see 75.75.-c)
• 71.30.+h: Metal-insulator transitions and other electronic transitions
• 73.50.-h: Electronic transport phenomena in thin films(for electronic transport in mesoscopic systems, see 73.23.-b; see also 73.40.-c Electronic transport in interface structures; for electronic transport in nanoscale materials and structures, see 73.63.-b)

• Journal: Acta Physica Polonica A
• Year: 2007
• Volume: 111
• Issue: 1
• Pages: 111-115

Dates

published

2007-01

received

2006-09-04

Contributors

author

R. Butkutė

• Semiconductor Physics Institute, A. Goštauto 11, Vilnius, 01108 Lithuania

author

F. Anisimovas

• Semiconductor Physics Institute, A. Goštauto 11, Vilnius, 01108 Lithuania

author

A. Oginskis

• Semiconductor Physics Institute, A. Goštauto 11, Vilnius, 01108 Lithuania

author

A. Steikūnienė

• Semiconductor Physics Institute, A. Goštauto 11, Vilnius, 01108 Lithuania

author

J. Devenson

• Semiconductor Physics Institute, A. Goštauto 11, Vilnius, 01108 Lithuania

author

B. Vengalis

• Semiconductor Physics Institute, A. Goštauto 11, Vilnius, 01108 Lithuania

References

• 1. P. Duan, Z. Chen, S. Dai, Y. Zhou, H. Lu, K. Jin, B. Cheng, Appl. Phys. Lett., 84, 4741, 2004
• 2. P. Mandal, S. Das, Phys. Rev. B, 56, 15073, 1997
• 3. C. Mitra, P. Raychaudhuri, G. Kobernik, K. Dorr, K.H. Muller, L. Schultz, R. Pinto, Appl. Phys. Lett., 79, 2408, 2001
• 4. R. Butkute, J. Devenson, M.A. Rosa, A.K. Oginskis, F. Anisimovas, A. Vailionis, B. Vengalis, Lithuanian J. Phys., 46, 89, 2006
• 5. B. Vengalis, J. Devenson, K. Sliuziene, R. Butkute, M.A. Rosa, V. Lisauskas, A.K. Oginskis, F. Anisimovas, Thin Solid Films, 515, 599, 2006

Identifiers

DOI

10.12693/APhysPolA.111.111