Asymmetrically Shaped Pseudomorphic Modulation Doped Structure for Microwave Detection

• Authors: A. Kozič , Č. Paškevič , A. Sužiedėlis , J. Gradauskas , S. Ašmontas , A. Szerling , H. Wrzesińska
• Languages of publication: EN

Abstracts

EN

In this paper we propose a microwave detector based on a AlGaAs/InGaAs/GaAs structure. Its operation relies on non-uniform carrier heating of the two-dimensional electron gas in the microwave electric fields which is a result of the asymmetric shape of the device fabricated on the base of pseudomorphic modulation doped AlGaAs/InGaAs/GaAs structure. The voltage sensitivity of the device at nitrogen temperature is 38 V/W for 10 GHz radiations and is higher compared to that of modulation doped AlGaAs/GaAs of the same configuration.

Keywords

EN

85.30.De; 72.30.+q

Discipline

• 85.30.De: Semiconductor-device characterization, design, and modeling
• 72.30.+q: High-frequency effects; plasma effects

• Journal: Acta Physica Polonica A
• Year: 2006
• Volume: 110
• Issue: 6
• Pages: 845-849

Dates

published

2006-12

received

2006-10-02

Contributors

author

A. Kozič

• Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania

author

Č. Paškevič

• Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania

author

A. Sužiedėlis

• Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania

author

J. Gradauskas

• Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania

author

S. Ašmontas

• Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania

author

A. Szerling

• Institute of Electron Technology, al. Lotnikow 32/46, 02-668 Warsaw, Poland

author

H. Wrzesińska

• Institute of Electron Technology, al. Lotnikow 32/46, 02-668 Warsaw, Poland

References

• 1. S. Asmontas, A. Suziedelis, J. Thermoelectricity, 1, 5, 1997
• 2. A. Suziedelis, J. Gradauskas, S. Asmontas, G. Valusis, H.G. Roskos, J. Appl. Phys., 93, 3034, 2003
• 3. A. Juozapavicius, A. Ardaravicius, A. Suziedelis, A. Kozic, J. Gradauskas, J. Kundrotas, D. Seliuta, E. Sirmulis, A. Asmontas, G. Valusis, H.G. Roskos, K. Kohler, Semicond. Sci. Technol., 19, S436, 2004
• 4. K.T. Chan, M.J. Lightner, G.A. Patterson, K.M. Yu, Appl. Phys. Lett., 56, 2022, 1990
• 5. J. Misiewicz, G. Sęk, P. Sitarek, Photoreflectance Spectroscopy of Semiconductor Structures, Publishing House of the Wrocl aw University of Technology, Wroclaw 1999, p. 201 (in Polish)
• 6. A. Suziedelis, S. Asmontas, Int. J. Infrared Millim. Waves, 15, 525, 1994

Identifiers

DOI

10.12693/APhysPolA.110.845