Excitation and Temperature Tuned Photoluminescence in Tl_2In_2S_3Se Layered Crystals

• Authors: I. Guler , K. Goksen , N. Gasanly
• Languages of publication: EN

Abstracts

EN

Photoluminescence spectra of Tl_2In_2S_3Se layered single crystals have been studied in the wavelength region of 535-725 nm and in the temperature range of 22-58 K. Two photoluminescence bands centered at 564 (2.20 eV, A-band) and 642 nm (1.93 eV, B-band) were observed at T = 22 K. Variations of both bands have been investigated as a function of excitation laser intensity in the range from 16 to 516 mW cm^{-2}. These bands are attributed to recombination of charge carriers through donor-acceptor pairs located in the band gap. Radiative transitions from shallow donor levels located 0.02 and 0.01 eV below the bottom of conduction band to acceptor levels located 0.05 and 0.44 eV above the top of the valence band are suggested to be responsible for the observed A- and B-bands in the photoluminescence spectra, respectively.

Keywords

EN

71.20.-b; 71.20.Nr; 78.20.-e; 78.55.-m

Discipline

• 71.20.-b: Electron density of states and band structure of crystalline solids
• 78.55.-m: Photoluminescence, properties and materials(for time resolved luminescence, see 78.47.jd)
• 78.20.-e: Optical properties of bulk materials and thin films(for optical properties related to materials treatment, see 81.40.Tv; for optical materials, see 42.70-a; for optical properties of superconductors, see 74.25.Gz; for optical properties of rocks and minerals, see 91.60.Mk; for optical properties of specific thin films, see 78.66.-w)
• 71.20.Nr: Semiconductor compounds

• Journal: Acta Physica Polonica A
• Year: 2006
• Volume: 110
• Issue: 6
• Pages: 823-831

Dates

published

2006-12

received

2006-11-29

Contributors

author

I. Guler

• Department of Physics, Middle East Technical University, 06531 Ankara, Turkey

author

K. Goksen

• Department of Physics, Middle East Technical University, 06531 Ankara, Turkey

author

N. Gasanly

• Department of Physics, Middle East Technical University, 06531 Ankara, Turkey

References

• 1. D. Muller, H. Hahn, Z. Anorg. Allg. Chemie, 438, 258, 1978
• 2. K.A. Yee, A. Albright, J. Am. Chem. Soc., 113, 6474, 1991
• 3. M. Hanias, A. Anagnostopoulos, K. Kambas, J. Spyridelis, Physica B, 160, 154, 1989; Mat. Res. Bull., 27, 25, 1992
• 4. S.R. Samedov, O. Baykan, A. Gulubayov, Int. J. Inf. Millimeter Waves, 25, 735, 2004
• 5. T.D. Ibrahimov, I.I. Aslanov, Solid State Commun., 123, 339, 2002
• 6. A.M. Akhmedov, A.E. Bakhyshov, A.A. Lebedev, M.A. Yakobson, Sov. Phys. Semicond., 12, 299, 1978
• 7. K.R. Allakhverdiev, Solid State Commun., 111, 253, 1999
• 8. A. Aydinli, N.M. Gasanly, I. Yilmaz, A. Serpenguzel, Semicond. Sci. Technol., 14, 599, 1999
• 9. I. Guler, K. Goksen, N.M. Gasanly, submitted to Cryst. Res. Technol
• 10. P.Y. Yu, M. Cardona, Fundamentals of Semiconductors, Springer, Berlin 1995
• 11. J.I. Pankove, Optical Processes in Semiconductors, Prentice-Hall, New Jersey 1971
• 12. L. Bai, P.G. Schunemann, T.M. Polak, N.C. Giles, Opt. Mater., 26, 501, 2004
• 13. A. Anedda, M.B. Casu, A. Serpi, I.I. Burlakov, I.M. Tiginyanu, V.V. Ursaki, J. Phys. Chem. Sol., 58, 325, 1997
• 14. N.M. Gasanly, A. Serpenguzel, O. Gurlu, A. Aydinli, I. Yilmaz, Solid State Commun., 108, 525, 1998
• 15. R. Bacewicz, A. Dzierzega, R. Trykozko, Jpn. J. Appl. Phys., 32, Suppl. 3, 194, 1993
• 16. E. Zacks, A. Halperin, Phys. Rev. B, 6, 3072, 1972
• 17. A. Bauknecht, S. Siebentritt, J. Albert, M.Ch. Lux-Steiner, J. Appl. Phys., 89, 4391, 2001
• 18. T. Schmidt, K. Lischka, W. Zulehner, Phys. Rev. B, 45, 8989, 1992

Identifiers

DOI

10.12693/APhysPolA.110.823