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2006 | 110 | 6 | 817-822
Article title

Studies of Response of Metal - Porous Silicon Structures to Microwave Radiation

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Abstracts
EN
Structures containing layers of porous silicon with two metal contacts are investigated. Porous silicon is manufactured by anodizing p-type crystalline silicon plates of resistivity of 0.4 Ω cm. Contacts for the samples are made by additional boron doping of the surface and by thermal evaporation of aluminium. Resistance and current-voltage characteristics are investigated. Response of the porous silicon layer containing structures under action of pulsed microwave radiation was investigated for the first time. The origin of the response is discussed.
Keywords
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Contributors
author
  • Vilnius Gediminas Technical University, Saulėtekio 11, 10223, Vilnius, Lithuania
author
  • Semiconductor Physics Institute, Gostauto 11, 01108, Vilnius, Lithuania
author
  • Semiconductor Physics Institute, Gostauto 11, 01108, Vilnius, Lithuania
  • Vilnius Gediminas Technical University, Saulėtekio 11, 10223, Vilnius, Lithuania
author
  • Vilnius Gediminas Technical University, Saulėtekio 11, 10223, Vilnius, Lithuania
  • Vilnius Gediminas Technical University, Saulėtekio 11, 10223, Vilnius, Lithuania
  • Semiconductor Physics Institute, Gostauto 11, 01108, Vilnius, Lithuania
  • Semiconductor Physics Institute, Gostauto 11, 01108, Vilnius, Lithuania
  • Vilnius Gediminas Technical University, Saulėtekio 11, 10223, Vilnius, Lithuania
References
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Document Type
Publication order reference
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bwmeta1.element.bwnjournal-article-appv110n606kz
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