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2006 | 110 | 6 | 817-822
Article title

Studies of Response of Metal - Porous Silicon Structures to Microwave Radiation

Content
Title variants
Languages of publication
EN
Abstracts
EN
Structures containing layers of porous silicon with two metal contacts are investigated. Porous silicon is manufactured by anodizing p-type crystalline silicon plates of resistivity of 0.4 Ω cm. Contacts for the samples are made by additional boron doping of the surface and by thermal evaporation of aluminium. Resistance and current-voltage characteristics are investigated. Response of the porous silicon layer containing structures under action of pulsed microwave radiation was investigated for the first time. The origin of the response is discussed.
Keywords
EN
Year
Volume
110
Issue
6
Pages
817-822
Physical description
Dates
published
2006-12
received
2006-07-10
References
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Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv110n606kz
Identifiers
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