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Abstracts
We considered the practically interesting, very fast nonlinear diffusion of metastable vacancies in the surface of Si crystal, excited by soft X-rays. Here we used experimentally defined diffusion coefficients of singly and doubly negatively charged very fast vacancies generated by soft X-rays. These high concentration (about 10^{13} cm^{-3}) metastable vacancies at room temperature can diffuse and exist in the crystal for a very long time (about 24 hours for not so fast neutral vacancies) changing electrical conductivity, the Hall mobility of carriers and generating some resonance phenomena in the lattice of Si crystal. We measured superdiffusivity of negatively charged vacancies, generated by the Auger effect in the regions of the sample, where X-rays did not acted. In the paper we modified the formerly obtained analytical solution of nonlinear diffusion equation for calculation of distribution of vacancies in two-dimensional surface.
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Journal
Year
Volume
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Pages
505-510
Physical description
Dates
published
2006-10
received
2006-06-19
Contributors
author
- Faculty of Natural Sciences,Šiauliai University, Višinskio 25, Šiauliai, 76351, Lithuania
author
- Faculty of Mathematics and Informatics,Šiauliai University, Višinskio 19, Šiauliai, 76351, Lithuania
References
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv110n407kz