Fast Diffusion of Metastable Vacancies in Surface of Excited Si Crystals

• Authors: A. Janavičius , S. Turskienė
• Languages of publication: EN

Abstracts

EN

We considered the practically interesting, very fast nonlinear diffusion of metastable vacancies in the surface of Si crystal, excited by soft X-rays. Here we used experimentally defined diffusion coefficients of singly and doubly negatively charged very fast vacancies generated by soft X-rays. These high concentration (about 10^{13} cm^{-3}) metastable vacancies at room temperature can diffuse and exist in the crystal for a very long time (about 24 hours for not so fast neutral vacancies) changing electrical conductivity, the Hall mobility of carriers and generating some resonance phenomena in the lattice of Si crystal. We measured superdiffusivity of negatively charged vacancies, generated by the Auger effect in the regions of the sample, where X-rays did not acted. In the paper we modified the formerly obtained analytical solution of nonlinear diffusion equation for calculation of distribution of vacancies in two-dimensional surface.

Keywords

EN

66.30.-h; 66.30.Hs; 78.70.Ck

Discipline

• 78.70.Ck: X-ray scattering
• 66.30.-h: Diffusion in solids(for surface and interface diffusion, see 68.35.Fx)

• Journal: Acta Physica Polonica A
• Year: 2006
• Volume: 110
• Issue: 4
• Pages: 505-510

Dates

published

2006-10

received

2006-06-19

Contributors

author

A. Janavičius

• Faculty of Natural Sciences,Šiauliai University, Višinskio 25, Šiauliai, 76351, Lithuania

author

S. Turskienė

• Faculty of Mathematics and Informatics,Šiauliai University, Višinskio 19, Šiauliai, 76351, Lithuania

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Identifiers

DOI

10.12693/APhysPolA.110.505