Tuning of Color Chromaticity of Light Emission from ZnSe Films Grown on a GaAs Substrate by Atomic Layer Epitaxy

• Authors: M. Skrobot , M. Godlewski , E. Guziewicz , K. Kopalko , M. Phillips
• Languages of publication: EN

Abstracts

EN

Monocrystalline films of sphalerite-type ZnSe were grown on GaAs(100) substrates from elemental Zn and Se precursors by atomic layer epitaxy in a gas flow system. Due to color mixing of band edge and deep defect-related emissions these layers emit intensive white light. Depth profiling cathodoluminescence indicates that green and red emissions mostly come from disordered regions of the films, close to the ZnSe/GaAs interface. We tested a possibility of tuning of chromaticity coordinates and of color temperature of the emission. We found that the chromaticity parameters (color perception) can be tuned by either regulating the appropriate accelerating voltage of electrons or current density of primary electrons in cathodoluminescence investigations. These properties of ZnSe films make them suitable for some practical applications as white light sources.

Keywords

EN

42.79.-e; 78.66.-w; 81.05.-t

Discipline

• 78.66.-w: Optical properties of specific thin films(for optical properties of low-dimensional, mesoscopic, and nanoscale materials, see 78.67.-n; for optical properties of surfaces, see 78.68.+m)
• 81.05.-t: Specific materials: fabrication, treatment, testing, and analysis(for superconducting materials, see 74.70.-b, and 74.72.-h; for magnetic materials, see 75.50.-y; for optical materials, see 42.70.-a; for dielectric materials, see 77.84.-s; for disperse systems and complex fluids, see 82.70.-y; see also 82.75.-z Molecular sieves, zeolites, clathrates, and other complex solids; for materials properties, see sections 60 and 70)
• 42.79.-e: Optical elements, devices, and systems(for integrated optics, see 42.82.-m; for fiber optics, see 42.81.-i)

• Journal: Acta Physica Polonica A
• Year: 2006
• Volume: 110
• Issue: 3
• Pages: 359-367

Dates

published

2006-09

received

2006-06-17

Contributors

author

M. Skrobot

• Dept. of Mathematics and Natural Sciences, College of Science, Cardinal S. Wyszyński University, Dewajtis 5, 01-815 Warsaw, Poland

author

M. Godlewski

• Dept. of Mathematics and Natural Sciences, College of Science, Cardinal S. Wyszyński University, Dewajtis 5, 01-815 Warsaw, Poland
• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

E. Guziewicz

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

K. Kopalko

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

M. Phillips

• Microstructural Analysis Unit, UTS, Sydney, Australia

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Identifiers

DOI

10.12693/APhysPolA.110.359