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2006 | 110 | 3 | 353-358
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Theoretical Study of Spin Lifetimes in [110] Strained GaAs

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We present first-principles studies of the zero field spin splitting of conduction band in [110] strained GaAs that determine spin lifetimes in semiconductors. Our calculations reveal strong anisotropy of the linear-k spin splitting in the (110) plane of the Brillouin zone and very minor in the (001) plane. This provides a qualitative understanding of the difference in the spin lifetimes in the GaAs/AlAs heterostructures grown along [100] and [110] crystallographic directions.
  • Institute of Theoretical Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland
  • Institute of Theoretical Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland
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