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2006 | 110 | 3 | 353-358
Article title

Theoretical Study of Spin Lifetimes in [110] Strained GaAs

Content
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Languages of publication
EN
Abstracts
EN
We present first-principles studies of the zero field spin splitting of conduction band in [110] strained GaAs that determine spin lifetimes in semiconductors. Our calculations reveal strong anisotropy of the linear-k spin splitting in the (110) plane of the Brillouin zone and very minor in the (001) plane. This provides a qualitative understanding of the difference in the spin lifetimes in the GaAs/AlAs heterostructures grown along [100] and [110] crystallographic directions.
Keywords
Year
Volume
110
Issue
3
Pages
353-358
Physical description
Dates
published
2006-09
received
2006-06-17
References
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  • 6. J.A. Majewski, P. Vogl, in: 'Physics of Semiconductors 2002', Proc. 26th Int. Conf. Phys. Sem., Edinburgh 2002, Institute of Physics Conf. Series Vol. 171, Eds. A.R. Long, J.H. Davies, Institute of Physics Publishing, Bristol 2003, p. 305
  • 7. R. Eppenga, M.F.H. Schuurmans, Phys. Rev. B, 37, 10923, 1988
Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv110n311kz
Identifiers
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