Theoretical Study of Spin Lifetimes in [110] Strained GaAs

• Authors: A. Skierkowski , J. Majewski
• Languages of publication: EN

Abstracts

EN

We present first-principles studies of the zero field spin splitting of conduction band in [110] strained GaAs that determine spin lifetimes in semiconductors. Our calculations reveal strong anisotropy of the linear-k spin splitting in the (110) plane of the Brillouin zone and very minor in the (001) plane. This provides a qualitative understanding of the difference in the spin lifetimes in the GaAs/AlAs heterostructures grown along [100] and [110] crystallographic directions.

Keywords

EN

71.55.Eq; 71.70.Fk; 71.70.Ej; 72.25.Rb

Discipline

• 71.55.Eq: III-V semiconductors
• 72.25.Rb: Spin relaxation and scattering
• 71.70.Ej: Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect
• 71.70.Fk: Strain-induced splitting

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2006
• Volume: 110
• Issue: 3
• Pages: 353-358

Dates

published

2006-09

received

2006-06-17

Contributors

author

A. Skierkowski

• Institute of Theoretical Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland

author

J. Majewski

• Institute of Theoretical Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland

References

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Identifiers

DOI

10.12693/APhysPolA.110.353