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2006 | 110 | 3 | 353-358
Article title

Theoretical Study of Spin Lifetimes in [110] Strained GaAs

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EN
Abstracts
EN
We present first-principles studies of the zero field spin splitting of conduction band in [110] strained GaAs that determine spin lifetimes in semiconductors. Our calculations reveal strong anisotropy of the linear-k spin splitting in the (110) plane of the Brillouin zone and very minor in the (001) plane. This provides a qualitative understanding of the difference in the spin lifetimes in the GaAs/AlAs heterostructures grown along [100] and [110] crystallographic directions.
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Contributors
  • Institute of Theoretical Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland
author
  • Institute of Theoretical Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland
References
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  • 6. J.A. Majewski, P. Vogl, in: 'Physics of Semiconductors 2002', Proc. 26th Int. Conf. Phys. Sem., Edinburgh 2002, Institute of Physics Conf. Series Vol. 171, Eds. A.R. Long, J.H. Davies, Institute of Physics Publishing, Bristol 2003, p. 305
  • 7. R. Eppenga, M.F.H. Schuurmans, Phys. Rev. B, 37, 10923, 1988
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv110n311kz
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