Theoretical Study of Spin Lifetimes in [110] Strained GaAs

• Authors: A. Skierkowski , J. Majewski
• Languages of publication: EN

Abstracts

EN

We present first-principles studies of the zero field spin splitting of conduction band in [110] strained GaAs that determine spin lifetimes in semiconductors. Our calculations reveal strong anisotropy of the linear-k spin splitting in the (110) plane of the Brillouin zone and very minor in the (001) plane. This provides a qualitative understanding of the difference in the spin lifetimes in the GaAs/AlAs heterostructures grown along [100] and [110] crystallographic directions.

Keywords

EN

71.55.Eq   71.70.Fk   71.70.Ej   72.25.Rb  

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2006
• Volume: 110
• Issue: 3
• Pages: 353-358

Dates

published

2006-09

received

2006-06-17

References

• 1. G.A. Prinz, Science, 283, 330, 1999
• 2. I. Zutic, J. Fabian, S. Das Sarma, Rev. Mod. Phys., 76, 323, 2004
• 3. Y. Ohno, R. Terauchi, T. Adachi, F. Matsukura, H. Ohno, Phys. Rev. Lett., 83, 4196, 1999
• 4. J.A. Majewski, M. Stadele, P. Vogl, Mat. Res. Soc. Symp. Proc., 449, 887, 1997
• 5. J.A. Majewski, S. Birner, A. Trellakis, M. Sabathil, P. Vogl, Phys. Status Solidi C, 1, 2003, 2004
• 6. J.A. Majewski, P. Vogl, in: 'Physics of Semiconductors 2002', Proc. 26th Int. Conf. Phys. Sem., Edinburgh 2002, Institute of Physics Conf. Series Vol. 171, Eds. A.R. Long, J.H. Davies, Institute of Physics Publishing, Bristol 2003, p. 305
• 7. R. Eppenga, M.F.H. Schuurmans, Phys. Rev. B, 37, 10923, 1988

Identifiers

DOI

10.12693/APhysPolA.110.353