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Abstracts
Room temperature, continuous wave operation of InGaN multi-quantum wells laser diodes made by rf plasma assisted molecular beam epitaxy at 411 nm wavelength is demonstrated. The threshold current density and voltage were 4.2 kA/cm^2 and 5.3 V, respectively. High optical power output of 60 mW was achieved. The lifetime of these laser diodes exceeds 5 h with 2 mW of optical output power. The laser diodes are fabricated on low dislocation density bulk GaN substrates, at growth conditions which resembles liquid phase epitaxy. We demonstrate that relatively low growth temperatures (600-700°C) pose no intrinsic limitations for fabrication of nitride optoelectronic components by plasma assisted molecular beam epitaxy.
Discipline
Journal
Year
Volume
Issue
Pages
345-351
Physical description
Dates
published
2006-09
received
2006-06-17
Contributors
author
- Institute of High Pressure Physics, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warszawa, Poland
- TopGaN Ltd., Sokołowska 29/37, 01-142 Warszawa, Poland
author
- Institute of High Pressure Physics, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warszawa, Poland
- TopGaN Ltd., Sokołowska 29/37, 01-142 Warszawa, Poland
author
- Institute of High Pressure Physics, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warszawa, Poland
- TopGaN Ltd., Sokołowska 29/37, 01-142 Warszawa, Poland
author
- Institute of High Pressure Physics, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warszawa, Poland
- TopGaN Ltd., Sokołowska 29/37, 01-142 Warszawa, Poland
author
- TopGaN Ltd., Sokołowska 29/37, 01-142 Warszawa, Poland
author
- Institute of High Pressure Physics, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warszawa, Poland
author
- Institute of High Pressure Physics, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warszawa, Poland
author
- Institute of High Pressure Physics, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warszawa, Poland
- TopGaN Ltd., Sokołowska 29/37, 01-142 Warszawa, Poland
author
- Institute of High Pressure Physics, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warszawa, Poland
- TopGaN Ltd., Sokołowska 29/37, 01-142 Warszawa, Poland
author
- Institute of High Pressure Physics, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warszawa, Poland
- TopGaN Ltd., Sokołowska 29/37, 01-142 Warszawa, Poland
author
- Institute of High Pressure Physics, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warszawa, Poland
References
- 1. S. Nakamura, M. Senoh, S.-I. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, K. Chocho, Appl. Phys. Lett., 73, 832, 1998
- 2. M. Kneissl, D.P. Bour, C.G. Van de Walle, L.T. Romano, J.E. Northrup, R.M. Wood, M. Teepe, N.M. Johnson, Appl. Phys. Lett., 75, 581, 1999
- 3. A. Ishizaka, Y. Murata, J. Phys., Condens. Matter, 6, L693, 1994
- 4. W. Utsumi, H. Saitoh, H. Kaneko, T. Watanuki, K. Aoki, O. Shimomura, Nature Mater., 2, 735, 2003
- 5. M. Kauer, S.E. Hooper, V. Bousquet, K. Johnson, C. Zellweger, J.M. Barnes, J. Windle, T.M. Smeeton, J. Heffernan, Electron. Lett., 41, 23, 2005
- 6. N. Grandjean, B. Damilano, J. Massies, J. Phys., Condens. Matter, 13, 6945, 2001
- 7. J.A. Bardwell, Y. Liu, H. Tang, J.B. Webb, S.J. Rolfe, J. Lapointe, Electron. Lett., 39, 564, 2003
- 8. M.J. Manfra, K.W. Baldwin, M. Sergent, R.J. Molnar, J. Caissie, Appl. Phys. Lett., 85, 1722, 2004
- 9. I.P. Smorchkova, L. Chen, T. Mates, L. Shen, S. Heikman, B. Moran, S. Keller, S.P. DenBaars, J.S. Speck, U.K. Mishra, J. Appl. Phys., 90, 5196, 2001
- 10. C. Skierbiszewski, K. Dybko, W. Knap, J. Lusakowski, M. Siekacz, W. Krupczyński, G. Nowak, M. Boćkowski, Z. Wasilewski, D. Maude, T. Suski, S. Porowski, Appl. Phys. Lett., 86, 102106, 2005
- 11. P. Waltereit, H. Sato, C. Poblenz, D.S. Green, J.S. Brown, M. McLaurin, T. Katona, S.P. DenBaars, J.S. Speck, J.-H. Liang, M. Kato, H. Tamura, S. Omori, C. Funaoka, Appl. Phys. Lett., 84, 2748, 2004
- 12. C. Skierbiszewski, Z. Wasilewski, M. Siekacz, A. Feduniewicz, P. Perlin, P. Wisniewski, J. Borysiuk, I. Grzegory, M. Leszczynski, T. Suski, S. Porowski, Appl. Phys. Lett., 86, 011114, 2005
- 13. C. Skierbiszewski, P. Perlin, I. Grzegory, Z.R. Wasilewski, M. Siekacz, A. Feduniewicz, P. Wisniewski, J. Borysiuk, P. Prystawko, G. Kamler, T. Suski, S. Porowski, Semicond. Sci. Technol., 20, 809, 2005
- 14. B. Heying, I. Smorchkova, C. Poblenz, C. Elsass, P. Fini, S. DenBaars, U. Mishra, J.S. Speck, Appl. Phys. Lett., 77, 2885, 2000
- 15. C. Adelmann, J. Brault, D. Jalabert, P. Gentile, H. Mariette, Guido Mula, B. Daudin, J. Appl. Phys., 91, 9638, 2002
- 16. C. Skierbiszewski, Z. Wasilewski, M. Siekacz, A. Feduniewicz, B. Pastuszka, I. Grzegory, M. Leszczynski, S. Porowski, Phys. Status Solidi A, 201, 320, 2004
- 17. G. Koblmuller, R. Averbeck, H. Riechert, P. Pongratz, Phys. Rev. B, 69, 035325, 2004
- 18. J. Neugebauer, T.K. Zywietz, M. Scheffler, J.E. Northrup, H. Chen, R.M. Feenstra, Phys. Rev. Lett., 70, 56101, 2003
- 19. C. Skierbiszewski, Acta Phys. Pol. A, 108, 635, 2005
- 20. Th. Gessmann, J.W. Graff, Y.-L. Li, E.L. Waldron, E.F. Schubert, J. Appl. Phys., 92, 3740, 2002
- 21. T. Mukai, S. Nagahama, T. Yanamoto, M. Sano, Phys. Status Solidi A, 192, 261, 2002
- 22. B. Heying, E.J. Tarsa, C.R. Elsass, P. Fini, S.P. DenBaars, J.S. Speck, J. Appl. Phys., 85, 6470, 1999
- 23. H. Emmerich, C. Eck, Continuum Mech. Thermodynam., 17, 373, 2006
- 24. R.H. Swendsen, P.J. Kortman, D.P. Landau, H. Muller-Krumbhaar, J. Cryst. Growth, 35, 73, 1976
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv110n310kz