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2006 | 110 | 3 | 303-309
Article title

Excitonic Giant Zeeman Effect in Wide Gap Diluted Magnetic Semiconductors Based on ZnO and GaN

Content
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EN
Abstracts
EN
We present a theoretical description of the excitonic giant Zeeman effect observed in wide gap diluted magnetic semiconductors (Zn,Co)O and (Ga,Mn)N. In these materials, A and B excitons present quite complex energy shifts and change of oscillator strengths under magnetic field. These features can be well reproduced using an excitonic Hamiltonian, taking into account ion-carrier exchange, wurtzite trigonal crystal field, spin-orbit and electron-hole exchange interactions.
Keywords
Year
Volume
110
Issue
3
Pages
303-309
Physical description
Dates
published
2006-09
received
2006-06-17
References
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  • 7. W. Pacuski, D. Ferrand, J. Cibert, J.A. Gaj, A. Golnik, P. Kossacki, S. Marcet, H. Mariette, E. Sarigiannidou, to be published
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Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv110n304kz
Identifiers
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