III-Nitride Nanostructures for Infrared Optoelectronics

• Authors: E. Monroy , F. Guillot , S. Leconte , E. Bellet-Amalric , L. Nevou , L. Doyennette , M. Tchernycheva , F. Julien , E. Baumann , F. Giorgetta , D. Hofstetter , Le Dang
• Languages of publication: EN

Abstracts

EN

Thanks to their large conduction band offset (~1.8 eV for the GaN/AlN system) and subpicosecond intersubband scattering rates, III-nitride heterostructures in the form of quantum wells or quantum dots are excellent candidates for high-speed unipolar devices operating at optical-fiber telecommunication wavelengths, and relying on the quantum confinement of electrons. In this work, we present the plasma-assisted molecular-beam epitaxial growth of quantum well infrared photodetector structures. The growth of Si-doped GaN/AlN multiple quantum well structures is optimized by controlling substrate temperature, metal excess and growth interruptions. Structural characterization confirms a reduction of the interface roughness to the monolayer scale. P-polarized intersubband absorption peaks covering the 1.33-1.91μm wavelength range are measured on samples with quantum well thickness varying from 1 to 2.5 nm. Complete intersubband photodetectors have been grown on conductive AlGaN claddings, the Al mole fraction of the cladding matching the average Al content of the active region. Photovoltage measurements reveal a narrow (~90 meV) detection peak at 1.39μm at room temperature.

Keywords

EN

73.21.Fg; 78.67.De; 85.60.Gz; 85.35.Be; 81.15.Hi; 81.07.St

Discipline

• 81.15.Hi: Molecular, atomic, ion, and chemical beam epitaxy
• 78.67.De: Quantum wells
• 73.21.Fg: Quantum wells
• 85.35.Be: Quantum well devices (quantum dots, quantum wires, etc.)
• 85.60.Gz: Photodetectors (including infrared and CCD detectors)(for superconducting infrared detectors, see 85.25.Pb; for superconducting optical, x-ray and γ-ray detectors, see 85.25.Oj; see also 07.57.Kp in instruments)
• 81.07.St: Quantum wells

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2006
• Volume: 110
• Issue: 3
• Pages: 295-301

Dates

published

2006-09

received

2006-06-17

Contributors

author

E. Monroy

• CEA-Grenoble, DRFMC/SP2M/PSC, 17 rue des Martyrs, 38054 Grenoble, France

author

F. Guillot

• CEA-Grenoble, DRFMC/SP2M/PSC, 17 rue des Martyrs, 38054 Grenoble, France

author

S. Leconte

• CEA-Grenoble, DRFMC/SP2M/PSC, 17 rue des Martyrs, 38054 Grenoble, France

author

E. Bellet-Amalric

• CEA-Grenoble, DRFMC/SP2M/PSC, 17 rue des Martyrs, 38054 Grenoble, France

author

L. Nevou

• Institut d'Electronique Fondamentale, Université Paris-Sud, 91405 Orsay, France

author

L. Doyennette

• Institut d'Electronique Fondamentale, Université Paris-Sud, 91405 Orsay, France

author

M. Tchernycheva

• Institut d'Electronique Fondamentale, Université Paris-Sud, 91405 Orsay, France

author

F. Julien

• Institut d'Electronique Fondamentale, Université Paris-Sud, 91405 Orsay, France

author

E. Baumann

• University of Neuchâtel, 2000 Neuchâtel, Switzerland

author

F. Giorgetta

• University of Neuchâtel, 2000 Neuchâtel, Switzerland

author

D. Hofstetter

• University of Neuchâtel, 2000 Neuchâtel, Switzerland

author

Le Dang

• Laboratoire de Spectrométrie Physique, Université Joseph Fourier, 38402 Saint Martin d'Hères, France

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Identifiers

DOI

10.12693/APhysPolA.110.295