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2006 | 110 | 2 | 219-224
Article title

Dynamics of Excitation Transfer Inside InAs/GaAs Quantum Dot System

Content
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EN
Abstracts
EN
We present time-resolved photoluminescence investigations of InAs/GaAs structures containing quantum dots with the ground state at 1.43 eV. State filling effect and a Pauli blocking effect were clearly observed. These effects significantly influenced dynamics of excitation transfer from upper to lower state inside a dot leading to non-exponential dynamics. Numerical model based on nonlinear rate equations was proposed. The model described well the experimental data providing values of: lifetime of the ground state 0.53±0.03 ns, lifetime of excited state (when the ground state is full) 1.1±0.2 ns, and internal relaxation time (when the ground state is empty) 0.07±0.01 ns.
Keywords
Publisher

Year
Volume
110
Issue
2
Pages
219-224
Physical description
Dates
published
2006-08
received
2006-06-17
Contributors
author
  • Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland
author
  • Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland
author
  • Institute for Microstructural Sciences, NRC Canada, Ottawa, Canada
author
  • Institute for Microstructural Sciences, NRC Canada, Ottawa, Canada
References
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv110n215kz
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