Time-Resolved Transient Grating Spectroscopy for Studies of Nonequilibrium Carrier Dynamics in Wide Band-Gap Semiconductors

• Authors: K. Jarašiūnas , T. Malinauskas , K. Neimontas , V. Gudelis , R. Aleksiejūnas
• Languages of publication: EN

Abstracts

EN

Using interdisciplinary fields relevant to a highly excited semiconductor - nonequilibrium phenomena in high density plasma, light-induced changes of optical properties, and dynamic holography, we developed time-resolved four-wave mixing technique for monitoring the spatial and temporal carrier dynamics in wide band-gap semiconductors. This opened a new possibility to analyse fast electronic processes in a non-destructive "all-optical" way, i.e. without any electrical contacts. This technique allowed evaluation of recombination and transport processes and the determination of important carrier parameters which directly reveal the material quality: carrier lifetime, bipolar diffusion coefficients, surface recombination rate, nonlinear recombination rate, diffusion length, threshold of stimulated recombination. The recent experimental studies of differently grown group III-nitrides (heterostructures and free standing films) as well silicon carbide epilayers by nondegenerate picosecond four-wave mixing are presented.

Keywords

EN

72.20.Jv; 78.47.+p; 78.55.Cr

Discipline

• 78.55.Cr: III-V semiconductors
• 72.20.Jv: Charge carriers: generation, recombination, lifetime, and trapping

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2006
• Volume: 110
• Issue: 2
• Pages: 201-209

Dates

published

2006-08

received

2006-06-17

Contributors

author

K. Jarašiūnas

• Department of Semiconductor Optoelectronics, Institute of Materials Science and Applied Research, Vilnius University, Saulėtekio Ave. 9-III, 10222 Vilnius, Lithuania

author

T. Malinauskas

• Department of Semiconductor Optoelectronics, Institute of Materials Science and Applied Research, Vilnius University, Saulėtekio Ave. 9-III, 10222 Vilnius, Lithuania

author

K. Neimontas

• Department of Semiconductor Optoelectronics, Institute of Materials Science and Applied Research, Vilnius University, Saulėtekio Ave. 9-III, 10222 Vilnius, Lithuania

author

V. Gudelis

• Department of Semiconductor Optoelectronics, Institute of Materials Science and Applied Research, Vilnius University, Saulėtekio Ave. 9-III, 10222 Vilnius, Lithuania

author

R. Aleksiejūnas

• Department of Semiconductor Optoelectronics, Institute of Materials Science and Applied Research, Vilnius University, Saulėtekio Ave. 9-III, 10222 Vilnius, Lithuania

References

• 1. K. Jarasiunas, T. Malinauskas, A. Kadys, S. Miasojedovas, S. Jursenas, A. Zukauskas, D. Gogova, A. Kakanakova, E. Janzen, H. Larsson, B. Monemar, B. Beaumont, P. Gibart, Phys. Status Solidi C, 2, 1006, 2005
• 2. T. Malinauskas, K. Jarasiunas, R. Aleksiejunas, D. Gogova, B. Monemar, B. Beaumont, P. Gibart, Phys. Status Solidi B, 7, 1426, 2006
• 3. S. Jursenas, S. Miasojedovas, G. Kurilcik, A. Zukauskas, R. Aleksiejunas, T. Malinauskas, M. Sudzius, K. Jarasiunas, Acta Phys. Pol. A, 107, 240, 2005
• 4. K. Jarasiunas, R. Aleksiejunas, M. Sudzius, S. Miasojedovas, S. Jurs.enas, A. Zukauskas, M. Shur, E. Kuokstis, M. Asif Khan, Phys. Status Solidi A, 202, 820, 2005
• 5. Z. Bougrioua, M. Azize, P. Gibart, T. Malinauskas, K. Neimontas, A. Mekys, J. Storasta, K. Jarasiunas, to be published
• 6. K. Neimontas, T. Malinauskas, R. Aleksiejunas, M. Sud zius, K. Jarasiunas, L. Storasta, J.P. Bergman, E. Janzen, Semicond. Sci. Technol., 21, 952, 2006
• 7. H.J. Eichler, P. Gunter, D. Pohl, Light-Induced Dynamic Gratings, Springer Series in Optical Sciences, Vol. 50, Springer, Berlin 1986
• 8. R.K. Jain, M.B. Klein, in: Optical Phase Conjugation, Ed. R.A. Fisher, Acad. Press, New York 1983, Ch. 10
• 9. Nonlinear Optics in Semiconductors, Vols. I II, Eds. E. Garmire, A. Kost, Semiconductors and Semimetals, Vol. 59, Acad. Press, New York 1999
• 10. E. Frayssinet, B. Beaumont, J.P. Faurie, Pierre Gibart, Zs. Makkai, B. Pécz, P. Lefebvre, P. Valvin, MRS Internet J. Nitride Semicond. Res. 7, 8, 2002
• 11. D. Gogova, A. Kasic, H. Larsson, C. Hemingsson, B. Monemar, F. Tuomisto, K. Saarinen, L. Dobos, B. Pecz, P. Gibart, B. Beaumont, J. Appl. Phys., 79, 799, 2004
• 12. A. Ellison, J. Zhang, A. Henry, E. Janzen, J. Crystal Growth, 236, 225, 2002
• 13. T. Malinauskas, K. Jarasiunas, Acta Phys. Pol. A, 108, 781, 2005
• 14. A. Dmitriev, A. Oruzheinikov, J. Appl. Phys., 86, 3241, 1999
• 15. M. Ryu, E. Kuokstis, C. Chen, J. Yang, G. Simin, M. Khan, G. Sim, P. Yu, Solid State Commun., 126, 329, 2003
• 16. A. Ponce, S. Srinivasan, A. Bell, L. Geng, R. Liu, M. Stevens, J. Cai, H. Omiya, H. Marui, S. Tanaka, Phys. Status Solidi B, 240, 273, 2003
• 17. R.S.Q. Fareed, J.P. Zhang, R. Gaska, G. Tamulaitis, J. Mickevicius, R. Aleksiejunas, M.S. Shur, M. Asif Khan, Phys. Status Solidi C, 2, 2095, 2005

Identifiers

DOI

10.12693/APhysPolA.110.201