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2006 | 110 | 2 | 201-209
Article title

Time-Resolved Transient Grating Spectroscopy for Studies of Nonequilibrium Carrier Dynamics in Wide Band-Gap Semiconductors

Content
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Languages of publication
EN
Abstracts
EN
Using interdisciplinary fields relevant to a highly excited semiconductor - nonequilibrium phenomena in high density plasma, light-induced changes of optical properties, and dynamic holography, we developed time-resolved four-wave mixing technique for monitoring the spatial and temporal carrier dynamics in wide band-gap semiconductors. This opened a new possibility to analyse fast electronic processes in a non-destructive "all-optical" way, i.e. without any electrical contacts. This technique allowed evaluation of recombination and transport processes and the determination of important carrier parameters which directly reveal the material quality: carrier lifetime, bipolar diffusion coefficients, surface recombination rate, nonlinear recombination rate, diffusion length, threshold of stimulated recombination. The recent experimental studies of differently grown group III-nitrides (heterostructures and free standing films) as well silicon carbide epilayers by nondegenerate picosecond four-wave mixing are presented.
Keywords
EN
Publisher

Year
Volume
110
Issue
2
Pages
201-209
Physical description
Dates
published
2006-08
received
2006-06-17
Contributors
  • Department of Semiconductor Optoelectronics, Institute of Materials Science and Applied Research, Vilnius University, Saulėtekio Ave. 9-III, 10222 Vilnius, Lithuania
  • Department of Semiconductor Optoelectronics, Institute of Materials Science and Applied Research, Vilnius University, Saulėtekio Ave. 9-III, 10222 Vilnius, Lithuania
author
  • Department of Semiconductor Optoelectronics, Institute of Materials Science and Applied Research, Vilnius University, Saulėtekio Ave. 9-III, 10222 Vilnius, Lithuania
author
  • Department of Semiconductor Optoelectronics, Institute of Materials Science and Applied Research, Vilnius University, Saulėtekio Ave. 9-III, 10222 Vilnius, Lithuania
  • Department of Semiconductor Optoelectronics, Institute of Materials Science and Applied Research, Vilnius University, Saulėtekio Ave. 9-III, 10222 Vilnius, Lithuania
References
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv110n213kz
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