Crack Free GaInN/AlInN Multiple Quantum Wells Grown on GaN with Strong Intersubband Absorption at 1.55μm

• Authors: G. Cywiński , C. Skierbiszewski , A. Feduniewicz-Żmuda , M. Siekacz , L. Nevou , L. Doyennette , F. Julien , P. Prystawko , M. Kryśko , S. Grzanka , I. Grzegory , S. Porowski
• Languages of publication: EN

Abstracts

EN

Crack free GaInN/AlInN multiple quantum wells were grown by rf plasma-assisted molecular beam epitaxy on (0001) GaN/sapphire substrates. The strain-engineering concept was applied to eliminate cracking effect for growth of intersubband structures on GaN. Indium contained ternary compounds of barrier and well layers are contrary strained to the substrate material. A series of crack free GaInN/AlInN intersubband structures on (0001) GaN was fabricated and investigated. The assumed composition and layered structure were confirmed by room temperature photoluminescence and X-ray diffraction measurements. The intersubband measurements were done in multipass waveguide geometry by applying direct intersubband absorption and photoinduced intersubband absorption measurements. The optimized structure design contains forty periods of Si-doped GaInN/AlInN quantum wells and exhibits strong intersubband absorption.

Keywords

EN

68.65.Fg; 78.66.-w; 78.67.De; 78.40.Fy; 81.15.Hi

Discipline

• 78.66.-w: Optical properties of specific thin films(for optical properties of low-dimensional, mesoscopic, and nanoscale materials, see 78.67.-n; for optical properties of surfaces, see 78.68.+m)
• 81.15.Hi: Molecular, atomic, ion, and chemical beam epitaxy
• 78.67.De: Quantum wells
• 68.65.Fg: Quantum wells
• 78.40.Fy: Semiconductors

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2006
• Volume: 110
• Issue: 2
• Pages: 175-181

Dates

published

2006-08

received

2006-06-17

Contributors

author

G. Cywiński

• Institute of High Pressure Physics, Polish Academy of Sciences, Sokołowska 29, 01-142 Warsaw, Poland

author

C. Skierbiszewski

• Institute of High Pressure Physics, Polish Academy of Sciences, Sokołowska 29, 01-142 Warsaw, Poland
• TopGaN Ltd., 01-142 Warsaw, Poland

author

A. Feduniewicz-Żmuda

• TopGaN Ltd., 01-142 Warsaw, Poland

author

M. Siekacz

• Institute of High Pressure Physics, Polish Academy of Sciences, Sokołowska 29, 01-142 Warsaw, Poland

author

L. Nevou

• Action OptoGaN, Institut d'Electronique Fondamentale, Université Paris-Sud, UMR 8622 CNRS, Paris, 91405 Orsay Cedex, France

author

L. Doyennette

• Action OptoGaN, Institut d'Electronique Fondamentale, Université Paris-Sud, UMR 8622 CNRS, Paris, 91405 Orsay Cedex, France

author

F. Julien

• Action OptoGaN, Institut d'Electronique Fondamentale, Université Paris-Sud, UMR 8622 CNRS, Paris, 91405 Orsay Cedex, France

author

P. Prystawko

• Institute of High Pressure Physics, Polish Academy of Sciences, Sokołowska 29, 01-142 Warsaw, Poland

author

M. Kryśko

• Institute of High Pressure Physics, Polish Academy of Sciences, Sokołowska 29, 01-142 Warsaw, Poland

author

S. Grzanka

• Institute of High Pressure Physics, Polish Academy of Sciences, Sokołowska 29, 01-142 Warsaw, Poland

author

I. Grzegory

• Institute of High Pressure Physics, Polish Academy of Sciences, Sokołowska 29, 01-142 Warsaw, Poland

author

S. Porowski

• Institute of High Pressure Physics, Polish Academy of Sciences, Sokołowska 29, 01-142 Warsaw, Poland

References

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Identifiers

DOI

10.12693/APhysPolA.110.175