PL EN


Preferences help
enabled [disable] Abstract
Number of results
2006 | 110 | 2 | 175-181
Article title

Crack Free GaInN/AlInN Multiple Quantum Wells Grown on GaN with Strong Intersubband Absorption at 1.55μm

Content
Title variants
Languages of publication
EN
Abstracts
EN
Crack free GaInN/AlInN multiple quantum wells were grown by rf plasma-assisted molecular beam epitaxy on (0001) GaN/sapphire substrates. The strain-engineering concept was applied to eliminate cracking effect for growth of intersubband structures on GaN. Indium contained ternary compounds of barrier and well layers are contrary strained to the substrate material. A series of crack free GaInN/AlInN intersubband structures on (0001) GaN was fabricated and investigated. The assumed composition and layered structure were confirmed by room temperature photoluminescence and X-ray diffraction measurements. The intersubband measurements were done in multipass waveguide geometry by applying direct intersubband absorption and photoinduced intersubband absorption measurements. The optimized structure design contains forty periods of Si-doped GaInN/AlInN quantum wells and exhibits strong intersubband absorption.
Keywords
Contributors
author
  • Institute of High Pressure Physics, Polish Academy of Sciences, Sokołowska 29, 01-142 Warsaw, Poland
  • Institute of High Pressure Physics, Polish Academy of Sciences, Sokołowska 29, 01-142 Warsaw, Poland
  • TopGaN Ltd., 01-142 Warsaw, Poland
  • TopGaN Ltd., 01-142 Warsaw, Poland
author
  • Institute of High Pressure Physics, Polish Academy of Sciences, Sokołowska 29, 01-142 Warsaw, Poland
author
  • Action OptoGaN, Institut d'Electronique Fondamentale, Université Paris-Sud, UMR 8622 CNRS, Paris, 91405 Orsay Cedex, France
author
  • Action OptoGaN, Institut d'Electronique Fondamentale, Université Paris-Sud, UMR 8622 CNRS, Paris, 91405 Orsay Cedex, France
author
  • Action OptoGaN, Institut d'Electronique Fondamentale, Université Paris-Sud, UMR 8622 CNRS, Paris, 91405 Orsay Cedex, France
author
  • Institute of High Pressure Physics, Polish Academy of Sciences, Sokołowska 29, 01-142 Warsaw, Poland
author
  • Institute of High Pressure Physics, Polish Academy of Sciences, Sokołowska 29, 01-142 Warsaw, Poland
author
  • Institute of High Pressure Physics, Polish Academy of Sciences, Sokołowska 29, 01-142 Warsaw, Poland
author
  • Institute of High Pressure Physics, Polish Academy of Sciences, Sokołowska 29, 01-142 Warsaw, Poland
author
  • Institute of High Pressure Physics, Polish Academy of Sciences, Sokołowska 29, 01-142 Warsaw, Poland
References
  • 1. C. Gmachl, H.M. Ng, A.Y. Cho, Appl. Phys Lett., 79, 1590, 2001
  • 2. R. Paiella, R. Martini, F. Capasso, C. Gmachl, H.Y. Hwang, D.L. Sivco, J.N. Baillargeon, A.Y. Cho, E.A. Whittaker, H.C. Liu, Appl. Phys Lett., 79, 2526, 2001
  • 3. C. Gmachl, H.M. Ng, S. Chu, A.Y. Cho, Appl. Phys Lett., 77, 3722, 2000
  • 4. N. Iizuka, K. Kaneko, N. Suzuki, T. Asano, S. Noda, O. Wada, Appl. Phys. Lett., 77, 648, 2000
  • 5. H.M. Ng, C. Gmachl, S.N.G. Chu, A.Y. Cho, J. Cryst. Growth, 220, 432, 2000
  • 6. J. Hamazaki, H. Kunugita, K. Ema, A. Kikuchi, K. Kishino, Phys. Rev. B, 71, 165334, 2005
  • 7. M. Tchernycheva, L. Nevou, L. Doyennette, F.H. Julien, E. Warde, F. Guillot, E. Monroy, E. Bellet-Amalric, T. Remmele, M. Albrecht, Phys. Rev. B, 73, 125347, 2006
  • 8. J.D. Heber, C. Gmachl, H.M. Ng, A.Y. Cho, Appl. Phys. Lett., 81, 1237, 2002
  • 9. N. Iizuka, K. Kaneko, N. Suzuki, Appl. Phys. Lett., 81, 1803, 2002
  • 10. J. Carlin, M. Ilegems, Appl. Phys. Lett., 83, 668, 2003
  • 11. G. Cywiński, C. Skierbiszewski, A. Feduniewicz-Zmuda, M. Siekacz, L. Nevou, L. Doyennette, M. Tchernycheva, F.H. Julien, P. Prystawko, M. Kryśko, S. Grzanka, I. Grzegory, A. Presz, J.Z. Domagala, J. Smalc, M. Albrecht, T. Remmele, S. Porowski, J. Vac. Sci. Technol. B, 24, 1505, 2006
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv110n209kz
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.