Spectroscopy of a Single Si Donor by the Resonant Tunnelling Experiment

• Authors: M. Baj , M. Gryglas , B. Jouault , D. Maude , G. Faini , U. Gennser , A. Cavanna
• Languages of publication: EN

Abstracts

EN

Resonant tunnelling via single impurities placed in a single barrier was experimentally studied. The typically observed structures in the current-voltage characteristics seem to be paired. Such a pair can be interpreted as ground and excited states of an impurity, related to X_{xy} and X_z valleys, which is in agreement with the results obtained for big mesas. However, it is not clear why X_{xy} states can be seen without any phonon participation.

Keywords

EN

73.63.-b; 73.40.Gk; 73.20.Hb; 72.10.Di; 72.10.Fk

Discipline

• 73.20.Hb: Impurity and defect levels; energy states of adsorbed species
• 73.63.-b: Electronic transport in nanoscale materials and structures(see also 73.23.-b Electronic transport in mesoscopic systems)
• 73.40.Gk: Tunneling(for tunneling in quantum Hall effects, see 73.43.Jn)
• 72.10.Fk: Scattering by point defects, dislocations, surfaces, and other imperfections (including Kondo effect)
• 72.10.Di: Scattering by phonons, magnons, and other nonlocalized excitations(see also 71.45.-d Collective effects in electronic structure of bulk materials)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2006
• Volume: 110
• Issue: 2
• Pages: 157-162

Dates

published

2006-08

received

2006-06-17

Contributors

author

M. Baj

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland

author

M. Gryglas

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland

author

B. Jouault

• Groupe d'Etude des Semiconducteurs, Université Montpellier II, CNRS, 34095 Montpellier, France

author

D. Maude

• Grenoble High Magnetic Field Laboratory, CNRS, 25 Avenue des Martyrs, 38042 Grenoble, France

author

G. Faini

• Groupe de Physique et Technologie des Nanostructures LPN - CNRS, 91460 Marcoussis, France

author

U. Gennser

• Groupe de Physique et Technologie des Nanostructures LPN - CNRS, 91460 Marcoussis, France

author

A. Cavanna

• Groupe de Physique et Technologie des Nanostructures LPN - CNRS, 91460 Marcoussis, France

References

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Identifiers

DOI

10.12693/APhysPolA.110.157