Features of Energy Spectrum of Pb_{1-x}Mn_xTe Doped with V

• Authors: A. Artamkin , A. Dobrovolsky , P. Dziawa , T. Story , E. Slynko , V. Slynko , L. Ryabova , D. Khokhlov
• Languages of publication: EN

Abstracts

EN

Recently new effects that are not characteristic of undoped lead telluride, such as the Fermi level pinning, giant negative magnetoresistance, were observed in Pb_{1-x}Mn_xTe alloys doped with transition and rare earth elements - Cr, Mo, Yb. We have studied transport and magnetic properties of Pb_{1-x}Mn_xTe doped with another transition element - vanadium. A series of Pb_{1-x}Mn_xTe(V) samples of different composition and degree of doping was investigated. It was observed that the resistivity demonstrates activation behavior at low temperatures for the samples with considerable amount of vanadium as well as for the samples without vanadium. The activation energy is proportional to the Mn content. In some of the samples, photoconductivity was observed at low temperatures. The results are discussed in terms of a model assuming formation of the impurity level by the vanadium impurity and the effect of the Fermi level pinning by this level.

Keywords

EN

71.20.Nr; 71.28.+d; 71.55.-i; 72.40.+w

Discipline

• 71.28.+d: Narrow-band systems; intermediate-valence solids(for magnetic aspects, see 75.20.Hr and 75.30.Mb in magnetic properties and materials)
• 71.20.Nr: Semiconductor compounds
• 72.40.+w: Photoconduction and photovoltaic effects
• 71.55.-i: Impurity and defect levels

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2006
• Volume: 110
• Issue: 2
• Pages: 151-156

Dates

published

2006-08

received

2006-06-17

Contributors

author

A. Artamkin

• M.V. Lomonosov Moscow State University, Vorobjevy Gory 1, Moscow 119992, Russia

author

A. Dobrovolsky

• M.V. Lomonosov Moscow State University, Vorobjevy Gory 1, Moscow 119992, Russia

author

P. Dziawa

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

T. Story

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

E. Slynko

• Chernovtsy Division of Institute of Problem of Semiconductor Material Science, Ukrainian Academy of Sciences, I. Vilde 5, Chernovtsy 274001, Ukraine

author

V. Slynko

• Chernovtsy Division of Institute of Problem of Semiconductor Material Science, Ukrainian Academy of Sciences, I. Vilde 5, Chernovtsy 274001, Ukraine

author

L. Ryabova

• M.V. Lomonosov Moscow State University, Vorobjevy Gory 1, Moscow 119992, Russia

author

D. Khokhlov

• M.V. Lomonosov Moscow State University, Vorobjevy Gory 1, Moscow 119992, Russia

References

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• 4. I.I. Ivanchik, D.R. Khokhlov, S.V. Ponomarev, E.I. Slyn'ko, A.A. Terekhov, A. de Visser, Yu.K. Vygranenko, in: Proc. 24 Int. Conf. on the Physics of Semiconductors, Ed. D. Gershoni, World Scientific, CD-ROM, 1999, VIII B-8
• 5. J. Niewodniczanska-Zawadzka, G. Elsinger, L. Palmetshofer, A. Lopez-Otero, E.J. Fantner, G. Bauer, W. Zawadzki, Physica B, 117, 458, 1983
• 6. A.I. Artamkin, A.E. Kozhanov, M. Arciszewska, W.D. Dobrowolski, T. Story, E.I. Slynko, V.E. Slynko, D.R. Khokhlov, Acta Phys. Pol. A, 106, 223, 2004

Identifiers

DOI

10.12693/APhysPolA.110.151