Spin-Dependent Phenomena in (Ga,Mn)As Heterostructures

• Authors: P. Sankowski , P. Kacman
• Languages of publication: EN

Abstracts

EN

A model for spin-dependent tunneling in semiconductor heterostructures, which combines a multi-orbital empirical tight-binding approach with a Landauer-Büttiker formalism, is presented. Using this approach we explain several phenomena observed in modulated structures of (Ga,Mn)As, i.e., large values of the electron current spin polarization in magnetic Esaki- Zener diode and the high tunneling magnetoresistance ratio. Next, the relevance of this theory to assess the tunneling anisotropic magnetoresistance effect is studied. The results of applying the tight-binding model to describe the recently observed interlayer exchange coupling in (Ga,Mn)As-based superlattices are also shown.

Keywords

EN

75.50.Pp; 72.25.Hg; 73.40.Gk

Discipline

• 73.40.Gk: Tunneling(for tunneling in quantum Hall effects, see 73.43.Jn)
• 75.50.Pp: Magnetic semiconductors
• 72.25.Hg: Electrical injection of spin polarized carriers

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2006
• Volume: 110
• Issue: 2
• Pages: 139-150

Dates

published

2006-08

received

2006-06-17

Contributors

author

P. Sankowski

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warszawa, Poland

author

P. Kacman

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warszawa, Poland

References

• 1. K.Y. Wang, R.P. Campion, K.W. Edmonds, M. Sawicki, T. Dietl, C.T. Foxon, B.L. Gallagher, in AIP Conf. Proc., Vol. 772, Physics of Semiconductors, 27th Int. Conf. on the Physics of Semiconductors, Eds. J. Menendez, C. Van de Walle, American Institute of Physics, New York 2005, p. 333
• 2. Y. Ohno, D.K. Young, B. Beschoten, F. Matsukura, H. Ohno, D.D. Awschalom, Nature, 402, 790, 1999
• 3. P. Van Dorpe, Z. Liu, W. Van Roy, V.F. Motsnyi, M. Sawicki, G. Borghs, J. De Boeck, Appl. Phys. Lett., 84, 3495, 2004
• 4. H. Ohno, N. Akiba, F. Matsukura, A. Shen, K. Ohtani, Y. Ohno, Appl. Phys. Lett., 73, 363, 1998
• 5. M. Tanaka, Y. Higo, Phys. Rev. Lett., 87, 026602, 2001
• 6. R. Mattana, J.-M. George, H. Jaffr`es, F. Nguyen Van Dau, A. Fert, B. Lépine, A. Guivarch, G. Jézéquel, Phys. Rev. Lett., 90, 166601, 2003
• 7. D. Chiba, F. Matsukura, H. Ohno, Physica E, 21, 966, 2004
• 8. M. Elsen, O. Boulle, J.-M. George, H. Jaffres, R. Mattana, V. Cros, A. Fert, A. Lemaire, R. Giraud, G. Faini, Phys. Rev., 73, 035303, 2006
• 9. C. Gould, C. Ruster, T. Jungwirth, E. Girgis, G.M. Schott, R. Giraud, K. Brunner, G. Schmidt, L.W. Molenkamp, Phys. Rev. Lett., 93, 117203, 2004
• 10. C. Ruster, C. Gould, T. Jungwirth, E. Girgis, G.M. Schott, R. Giraud, K. Brunner, G. Schmidt, L.W. Molenkamp, Phys. Rev. Lett., 94, 027203, 2005
• 11. A. Giddings, M. Khalid, T. Jungwirth, J. Wunderlich, S. Yasin, R. Campion, K. Edmonds, J. Sinova, K. Ito, K.Y. Wang, D. Williams, B. Gallagher, C.T. Foxon, Phys. Rev. Lett., 94, 127202, 2005
• 12. R. Giraud, M. Gryglas, L. Thevenard, A. Lematre, G. Faini, Appl. Phys. Lett., 87, 242505, 2005
• 13. N. Akiba, F. Matsukura, A. Shen, Y. Ohno, H. Ohno, A. Oiwa, S. Katsumoto, Y. Iye, Appl. Phys. Lett., 73, 2122, 1998
• 14. D. Chiba, N. Akiba, Y. Ohno, H. Ohno, Appl. Phys. Lett., 77, 1873, 2000
• 15. S.J. Chung, S. Lee, I.W. Park, X. Liu, J.K. Furdyna, J. Appl. Phys., 95, 7402, 2004
• 16. W. Szuszkiewicz, E. Dynowska, B. Hennion, F. Ott, M. Jouanne, J.F. Morhange, M. Karlsteen, J. Sadowski, Acta Phys. Pol. A, 100, 335, 2001
• 17. H. Kc{e}pa, J. Kutner-Pielaszek, A. Twardowski, C.F. Majkrzak, J. Sadowski, T. Story, T.M. Giebultowicz, Phys. Rev. B, 64, 121302(R), 2001
• 18. T. Dietl, H. Ohno, F. Matsukura, Phys. Rev. B, 63, 195205, 2001
• 19. G.A. Prinz, Science, 282, 1660, 1998
• 20. P. Bruno, Phys. Rev. B, 52, 411, 1995
• 21. J. Blinowski, P. Kacman, Phys. Rev. B, 64, 045302, 2001
• 22. H. Kepa, J. Kutner-Pielaszek, J. Blinowski, A. Twardowski, C.F. Majkrzak, T. Story, P. Kacman, R.R. Galazka, K. Ha, H.J.M. Swagten, W.J.M. de Jonge, A.Yu. Sipatov, V. Volobuev, T.M. Giebultowicz, Europhys. Lett., 56, 54, 2001
• 23. H. Kepa, G. Springholz, T.M. Giebultowicz, K.I. Goldman, C.F. Majkrzak, P. Kacman, J. Blinowski, S. Holl, H. Krenn, G. Bauer, Phys. Rev. B, 68, 024419, 2003
• 24. P. Sankowski, P. Kacman, Phys. Rev. B, 71, 201303(R), 2005
• 25. J.-M. Jancu, R. Scholz, F. Beltram, F. Bassani, Phys. Rev. B, 57, 6493, 1998
• 26. J. Okabayashi, A. Kimura, O. Rader, T. Mizokawa, A. Fujimori, T. Hayashi, M. Tanaka, Physica E, 10, 192, 2001
• 27. Aldo Di Carlo, P. Vogl, W. Potz, Phys. Rev. B, 50, 8358, 1994
• 28. C. Strahberger, P. Vogl, Phys. Rev. B, 62, 7289, 2000
• 29. P. Van Dorpe, W. Van Roy, J. De Boeck, G. Borghs, P. Sankowski, P. Kacman, J.A. Majewski, T. Dietl, Phys. Rev. B, 72, 205322, 2005
• 30. M. Kohda, T. Kita, Y. Ohno, F. Matsukura, H. Ohno, Appl. Phys. Lett., in press
• 31. P. Sankowski, P. Kacman, J. Majewski, T. Dietl, Physica E, 32, 375, 2006
• 32. P. Sankowski, P. Kacman, J.A. Majewski, T. Dietl, arXiv:cond-mat/0607206

Identifiers

DOI

10.12693/APhysPolA.110.139