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2006 | 110 | 2 | 139-150
Article title

Spin-Dependent Phenomena in (Ga,Mn)As Heterostructures

Content
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EN
Abstracts
EN
A model for spin-dependent tunneling in semiconductor heterostructures, which combines a multi-orbital empirical tight-binding approach with a Landauer-Büttiker formalism, is presented. Using this approach we explain several phenomena observed in modulated structures of (Ga,Mn)As, i.e., large values of the electron current spin polarization in magnetic Esaki- Zener diode and the high tunneling magnetoresistance ratio. Next, the relevance of this theory to assess the tunneling anisotropic magnetoresistance effect is studied. The results of applying the tight-binding model to describe the recently observed interlayer exchange coupling in (Ga,Mn)As-based superlattices are also shown.
Keywords
EN
Year
Volume
110
Issue
2
Pages
139-150
Physical description
Dates
published
2006-08
received
2006-06-17
References
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Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv110n204kz
Identifiers
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