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Abstracts
nextnano^3 is a simulation tool that aims at providing global insight into the basic physical properties of realistic three-dimensional mesoscopic semiconductor structures. It focuses on quantum mechanical properties such as the global electronic structure, optical properties, and the effects of electric and magnetic fields for virtually any geometry and combination of semiconducting materials. For the calculation of the carrier dynamics a drift-diffusion model based on a quantum-mechanically calculated density is employed. In this paper we present an overview of the capabilities of nextnano^3 and discuss some of the main equations that are implemented into the code. As examples, we first discuss the strain tensor components and the piezoelectric effect associated with a compressively strained InAs layer for different growth directions, secondly, we calculate self-consistently the quantum mechanical electron density of a Double Gate MOSFET, then we compare the intersubband transitions in a multi-quantum well structure that have been obtained with a single-band effective mass approach and with an 8-band k·p model, and finally, we calculate the energy spectrum of a structure in a uniform magnetic field.
Discipline
Journal
Year
Volume
Issue
Pages
111-124
Physical description
Dates
published
2006-08
received
2006-06-17
Contributors
author
- Walter Schottky Institute and Physics Depart., Technical University of Munich, Am Coulombwall 3, 85748 Garching, Germany
author
- Walter Schottky Institute and Physics Depart., Technical University of Munich, Am Coulombwall 3, 85748 Garching, Germany
author
- Walter Schottky Institute and Physics Depart., Technical University of Munich, Am Coulombwall 3, 85748 Garching, Germany
author
- Walter Schottky Institute and Physics Depart., Technical University of Munich, Am Coulombwall 3, 85748 Garching, Germany
author
- Institute of Theoretical Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland
author
- Walter Schottky Institute and Physics Depart., Technical University of Munich, Am Coulombwall 3, 85748 Garching, Germany
author
- Walter Schottky Institute and Physics Depart., Technical University of Munich, Am Coulombwall 3, 85748 Garching, Germany
author
- Walter Schottky Institute and Physics Depart., Technical University of Munich, Am Coulombwall 3, 85748 Garching, Germany
author
- Walter Schottky Institute and Physics Depart., Technical University of Munich, Am Coulombwall 3, 85748 Garching, Germany
author
- Walter Schottky Institute and Physics Depart., Technical University of Munich, Am Coulombwall 3, 85748 Garching, Germany
References
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- 3. The nextnano^3 software can be obtained from http://www.wsi.tum.de/nextnano3 and http://www.nextnano.de
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv110n202kz