Microscopic Luminescence Properties of ZnO and ZnO Based Heterostructures

• Authors: F. Bertram , J. Christen
• Languages of publication: EN

Abstracts

EN

The optical properties of excitonic recombinations in ZnO are investigated by spatially and spectrally resolved cathodoluminescence measurements. The relevance of cathodoluminescence microscopy as a spatially resolved luminescence technique as a simple but very powerful characterization method is stressed out in discussions of a wide variety of appropriate examples. A thorough discussion of the various features of the cathodoluminescence of an undoped ZnO bulk crystal, epitaxially grown ZnO and MgZnO/ZnO/MgZnO quantum well structure is given. Particular attention is devoted to the impact of the internal electrical fields, e.g. the Franz-Keldysh effect in ZnO. Furthermore, this study focuses on the spectral variations as a function of depth to the interface in ZnO homo- and heterostructures. Our aim is to establish the nature of the optical transitions influenced by internal fields, defects and impurity doping in ZnO/GaN and ZnO/ZnO interfaces. This review covers also the vertical transport, diffusion and capture of carriers in a MgZnO/ZnO/MgZnO quantum well structure.

Keywords

EN

78.60.Hk; 78.66.Hf; 81.05.Dz; 81.15.Gh

Discipline

• 78.66.Hf: II-VI semiconductors
• 81.15.Gh: Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)(for chemistry of MOCVD, see 82.33.Ya in physical chemistry and chemical physics)
• 81.05.Dz: II-VI semiconductors
• 78.60.Hk: Cathodoluminescence, ionoluminescence

• Journal: Acta Physica Polonica A
• Year: 2006
• Volume: 110
• Issue: 2
• Pages: 103-110

Dates

published

2006-08

received

2006-06-17

Contributors

author

F. Bertram

• Institute of Experimental Physics, Otto-von-Guericke-University Magdeburg, Postbox 4120, 39106 Magdeburg, Germany

author

J. Christen

• Institute of Experimental Physics, Otto-von-Guericke-University Magdeburgg, Postbox 4120, 39106 Magdeburg, Germany

References

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Identifiers

DOI

10.12693/APhysPolA.110.103