EN
The in-plane transport of strongly underdoped La_{2-x}Sr_xCuO_4 films was examined in the magnetic fields up to 14 T and in temperatures down to 1.6 K. While at high temperatures the samples display metallic-like resistivity, the low-T transport is governed by variable-range-hopping mechanism. Careful analysis shows that the temperature dependence of pre-exponential factor in Mott's variable-range-hopping law may not be neglected and that the density of states at the Fermi level can be effectively expressed as g(E-E_F)=N_0 (E-E_F)^p, with a small exponent p of the order of 0.1. In the magnetic field parallel to CuO_2 planes one of the variable-range-hopping parameter,ρ_0, increases by about 20-25%, while the other one, T_0, decreases by about 10-15%, resulting in the decrease in total resistivity. This effect may be related to the decrease of the tunneling barrier between different antiferromagnetic clusters in the presence of magnetic field.