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2006 | 109 | 2 | 159-170
Article title

Investigation of Compound Relaxation Processes in Crystal Lattice Dynamics of Si Irradiated by Soft X-rays

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Abstracts
EN
We applied soft X-rays for investigation of dynamics of Frenkel point defects in a Si crystal during its saturation with metastable vacancies with neighboring Si atoms in excited states or vacancies with neighboring Si atoms in interstitial states produced in the lattice after ejection of Auger electrons. The irradiated irregularities and defects of the lattice cause a change of Bragg reflection maxima. Several resonance phenomena related to the metastable states introduced into Si crystal by soft X-rays irradiation have been detected.
Keywords
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Contributors
author
  • Šiauliai University, P. Višinskio 25, 76351 Šiauliai, Lithuania
author
  • Faculty of Physics, Vilnius University, Saulėtekio 9, 10222 Vilnius, Lithuania
author
  • Šiauliai University, P. Višinskio 25, 76351 Šiauliai, Lithuania
References
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv109n203kz
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