Investigation of Compound Relaxation Processes in Crystal Lattice Dynamics of Si Irradiated by Soft X-rays

• Authors: A Janavičius , R Purlys , Ž Norgėla
• Languages of publication: EN

Abstracts

EN

We applied soft X-rays for investigation of dynamics of Frenkel point defects in a Si crystal during its saturation with metastable vacancies with neighboring Si atoms in excited states or vacancies with neighboring Si atoms in interstitial states produced in the lattice after ejection of Auger electrons. The irradiated irregularities and defects of the lattice cause a change of Bragg reflection maxima. Several resonance phenomena related to the metastable states introduced into Si crystal by soft X-rays irradiation have been detected.

Keywords

EN

61.72.-y; 61.72.Dd; 05.50.+q

Discipline

• 61.72.Dd: Experimental determination of defects by diffraction and scattering
• 05.50.+q: Lattice theory and statistics (Ising, Potts, etc.)(see also 64.60.Cn Order-disorder transformations, and 75.10.Hk Classical spin models)
• 61.72.-y: Defects and impurities in crystals; microstructure(for radiation induced defects, see 61.80.-x; for defects in surfaces, interfaces, and thin films, see 68.35.Dv and 68.55.Ln; see also 85.40.Ry Impurity doping, diffusion, and ion implantation technology; for effects of crystal defects and doping on superconducting transition temperature, see 74.62.Dh)

• Journal: Acta Physica Polonica A
• Year: 2006
• Volume: 109
• Issue: 2
• Pages: 159-170

Dates

published

2006-02

received

2005-04-13

(unknown)

2005-09-20

Contributors

author

A Janavičius

• Šiauliai University, P. Višinskio 25, 76351 Šiauliai, Lithuania

author

R Purlys

• Faculty of Physics, Vilnius University, Saulėtekio 9, 10222 Vilnius, Lithuania

author

Ž Norgėla

• Šiauliai University, P. Višinskio 25, 76351 Šiauliai, Lithuania

References

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Identifiers

DOI

10.12693/APhysPolA.109.159