Journal
Article title
Authors
Title variants
Languages of publication
Abstracts
We applied soft X-rays for investigation of dynamics of Frenkel point defects in a Si crystal during its saturation with metastable vacancies with neighboring Si atoms in excited states or vacancies with neighboring Si atoms in interstitial states produced in the lattice after ejection of Auger electrons. The irradiated irregularities and defects of the lattice cause a change of Bragg reflection maxima. Several resonance phenomena related to the metastable states introduced into Si crystal by soft X-rays irradiation have been detected.
Discipline
- 61.72.Dd: Experimental determination of defects by diffraction and scattering
- 05.50.+q: Lattice theory and statistics (Ising, Potts, etc.)(see also 64.60.Cn Order-disorder transformations, and 75.10.Hk Classical spin models)
- 61.72.-y: Defects and impurities in crystals; microstructure(for radiation induced defects, see 61.80.-x; for defects in surfaces, interfaces, and thin films, see 68.35.Dv and 68.55.Ln; see also 85.40.Ry Impurity doping, diffusion, and ion implantation technology; for effects of crystal defects and doping on superconducting transition temperature, see 74.62.Dh)
Journal
Year
Volume
Issue
Pages
159-170
Physical description
Dates
published
2006-02
received
2005-04-13
(unknown)
2005-09-20
Contributors
author
- Šiauliai University, P. Višinskio 25, 76351 Šiauliai, Lithuania
author
- Faculty of Physics, Vilnius University, Saulėtekio 9, 10222 Vilnius, Lithuania
author
- Šiauliai University, P. Višinskio 25, 76351 Šiauliai, Lithuania
References
- 1. B.N. Mukashev, X.A. Abdulin, Y.V. Gorelkinski, Adv. Phys. Sci., 170, 143, 2000 (in Russian)
- 2. R. Purlys, A.J. Janavičius, A. Mekys, S. Balakauskas, J. Storasta, Lith. J. Phys., 41, 376, 2001
- 3. A.J. Janavičius, J. Banys, R. Purlys, S. Balakauskas, Lith. J. Phys., 42, 337, 2002
- 4. A.I. Slucker, Y.I. Polikarpov, K.V. Vasiljeva, Phys. Solid State, 44, 1529, 2002
- 5. A.F. Chochlov, Physics of Slid State, Vol. 1, High School, Moscow 2001, p. 365, (in Russian)
- 6. V.S. Vavilov, A.E. Kiv, O.R. Nijazova, Mechanism of Producing and Migration of Defects in Semiconductors, Science, Moscow 1981, p. 368
- 7. G.D. Watkins, Mater. Sci. Semicond. Proc., 3, 227, 2000
- 8. L.F. Makarenko, Phys. Rev. B, Condens. Matter, 308, 465, 2001
- 9. T.R. Mattson, A.E. Mattson, Phys. Rev. B, 66, 214110, 2002
- 10. A.J. Janavičius, Acta Phys. Pol. A, 93, 505, 1998
- 11. W. Bardyszewski, Yevick, J. Appl. Phys., 58, 2713, 1985
- 12. L. Pavesi, J. Phys., Condens. Matter, 15, 1169, 2003
- 13. Ant Ural, P.B. Griffin, J.D. Plummer, Appl. Phys. Lett., 79, 4328, 2001
- 14. R. Givens, O.F. Alcantara Bonfim, Am. J. Phys., 71, 87, 2003
- 15. J.A. Van Vechten, Phys. Rev. B, 10, 1482, 1974
- 16. R. Karazija, The Theory of X-ray and Electronic Spectra of Free Atoms. An Introduction, Mokslas, Vilnius 1987, p. 274
- 17. R. Purlys, Ž. Norgėla, B. Gricienė, J. Zaveckienė, Sci. helth, 2, 64, 2002 (in Lithuanian)
- 18. A.J. Janavičius, Ž. Norgėla, R. Purlys, Acta Phys. Pol. A, 104, 459, 2003
- 19. J.A. Van Vechten, Phys. Rev. B, 38, 9913, 1988
- 20. G.D. Watkins, Mater. Sci. Semicond. Proc., 3, 227, 2000
- 21. B. Campbell, W. Choudhury, A. Mainwood, M. Newton, G. Davies, Nucl. Instrum. Methods A, 476, 680, 2002
- 22. C.A. Londos, G.I. Georgiou, L.G. Fytros, N. Sarlis, Diffus. Defect Data, Solid State Data B, Solid State Phenom., 47, 281, 2004
- 23. A.J. Janavičius, Ž. Norgėla, R. Purlys, Eur. Phys. J. Appl. Phys., 29, 127, 2005
- 24. P. Landsberg, Recombination in Semiconductors, Cambridge University Press, Cambridge 2003, p. 595
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv109n203kz