Effect of Heat Treatment on the ac Conductivity and Dielectric Properties of Ag_{33}Sb_{31}Se_{36} Thin Films

• Authors: E. Abd El-Wahabb
• Languages of publication: EN

Abstracts

EN

The effect of heat treatment on the ac conductivity and dielectric properties of the melt quenched and thermally evaporated Ag_{33}Sb_{31}Se_{36} chalcogenide system are reported for the first time. The results of the alternating current conductivity σ_{ac}, the dielectric constantε_1, and the dielectric lossε_2 of the Ag_{33}Sb_{31}Se_{36} thin film samples are presented over the temperature range 303-373 K and the frequency range 0.1-100 kHz. The temperature dependence of the ac conductivity σ_{ac}(ω) and the frequency exponent s are discussed with the aim of the correlated barrier hopping model. Values of σ_{ac}(ω),ε_1, and ε_2 were found to increase with the increase in the annealing temperature due to the reduction of the number of unsaturated defects which decrease the density of localized states in the band structure.

Keywords

EN

73.61.-r; 77.55.+f; 81.40.Rs; 81.40.Tv; 81.40.Ef

Discipline

• 81.40.Ef: Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
• 73.61.-r: Electrical properties of specific thin films(for optical properties of thin films, see 78.20.-e and 78.66.-w; for magnetic properties of thin films, see 75.70.-i)
• 81.40.Rs: Electrical and magnetic properties related to treatment conditions
• 81.40.Tv: Optical and dielectric properties related to treatment conditions

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2005
• Volume: 108
• Issue: 6
• Pages: 985-996

Dates

published

2005-12

received

2004-06-11

(unknown)

2005-02-21

(unknown)

2005-06-21

Contributors

author

E. Abd El-Wahabb

• Physics Department, Faculty of Education, Ain Shams University, Roxy, Cairo, Egypt

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Identifiers

DOI

10.12693/APhysPolA.108.985