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2005 | 108 | 5 | 903-908
Article title

An Estimate of the Energy Gap of InN from Measurements of the Fundamental Absorption Edge

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Languages of publication
EN
Abstracts
EN
Optical absorption between 0.4 and 4.5 eV of an InN layer grown by metalorganic vapour phase epitaxy on sapphire was measured at 296 and 12 K. The layer was also characterized by measurements of the Hall effect and of infrared reflectivity in the region of the plasma edge, which determined the concentration, mobility, and effective mass of electrons in the conduction band. The energy gap of InN was estimated to be equal to 0.9±0.2 eV. It was obtained from the spectral position of the fundamental absorption edge. Corrections to the energy gap resulting from the broadening of the fundamental absorption edge, from the Burstein-Moss shift, and from a band-gap shrinkage due to the impurity potential were included.
Keywords
Publisher

Year
Volume
108
Issue
5
Pages
903-908
Physical description
Dates
published
2005-11
received
2005-06-04
Contributors
author
  • Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland
author
  • Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland
author
  • Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland
author
  • Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv108n526kz
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