PL EN


Preferences help
enabled [disable] Abstract
Number of results
2005 | 108 | 5 | 859-865
Article title

InSb Quantum Dots in an InAsSb Matrix Grown by Molecular Beam Epitaxy

Content
Title variants
Languages of publication
EN
Abstracts
EN
We report on molecular beam epitaxy of InSb insertions in InAs and InAsSb matrices, emitting at wavelengths beyond 4μm. Different growth techniques for deposition of InSb quantum dots in the 1-2 monolayer range of the InSb nominal thickness, namely conventional molecular beam epitaxy and migration enhanced epitaxy, as well as different matrices (InAs and InAsSb) have been employed for increasing the emission wavelength of the InSb/InAs nanostructures. The formation of InSb quantum dots has been studied in situ using reflection high energy electron diffraction and ex situ by using transmission electron microscopy. The peculiarities of In(Ga)AsSb alloys growth and compositional control are also discussed. Bright photoluminescence up to 4.5μm has been observed at 80 K.
Keywords
Publisher

Year
Volume
108
Issue
5
Pages
859-865
Physical description
Dates
published
2005-11
received
2005-06-04
Contributors
author
  • Ioffe Physico-Technical Institute, 26 Polytekhnicheskaya str., St. Petersburg 194021, Russia
author
  • Ioffe Physico-Technical Institute, 26 Polytekhnicheskaya str., St. Petersburg 194021, Russia
author
  • Ioffe Physico-Technical Institute, 26 Polytekhnicheskaya str., St. Petersburg 194021, Russia
  • Ioffe Physico-Technical Institute, 26 Polytekhnicheskaya str., St. Petersburg 194021, Russia
author
  • Ioffe Physico-Technical Institute, 26 Polytekhnicheskaya str., St. Petersburg 194021, Russia
author
  • Ioffe Physico-Technical Institute, 26 Polytekhnicheskaya str., St. Petersburg 194021, Russia
author
  • Ioffe Physico-Technical Institute, 26 Polytekhnicheskaya str., St. Petersburg 194021, Russia
References
  • 1. X. Marcadet, A. Racovska, I. Prevot, G. Glastre, B. Vinter, V. Berger, J. Cryst. Growth, 227-228, 609, 2001
  • 2. A. Wilk, B. Fraisse, P. Christol, G. Boissier, P. Grech, M.El. Gazouli, Y. Rouillard, A.N. Baranov, A. Joullie, J. Cryst. Growth, 227-228, 586, 2001
  • 3. G. Kida, III-Vs Rev., 16, 24, 2003
  • 4. H. Simchi, III-Vs Rev., 17, 27, 2004
  • 5. B.R. Bennett, R. Magno, B.V. Shanabrook, Appl. Phys. Lett., 68, 505, 1996
  • 6. E.R. Glaser, B.R. Bennett, B.V. Shanabrook, R. Magno, Appl. Phys. Lett., 68, 3614, 1996
  • 7. A.F. Tsatsul'nikov, N.N. Ledentsov, M.V. Maximov, B.Ya. Meltser, P.V. Neklyudov, S.V. Ivanov, B.V. Volovik, A.K. Kryganovskii, A.A. Suvorova, A.N. Titikov, P.S. Kop'ev, Zh.I. Alferov, M. Grundmann, D. Bimberg, J. Electron. Mater., 27, 414, 1998
  • 8. A.F. Tsatsul'nikov, D.A. Bedarev, B.V. Volovik, S.V. Ivanov, M.V. Maximov, Yu.G. Musihin, N.N. Ledentsov, B.Ya. Meltser, V.A. Solov'ev, P.S. Kop'ev, A.Yu. Chernyshov, M.V. Belousov, Semiconductors, 33, 886, 1999
  • 9. T. Utzmeier, G. Armelles, P.A. Postigo, F. Briones, Phys. Rev. B, 56, 3621, 1997
  • 10. S.V. Ivanov, A.N. Semenov, V.A. Solov'ev, O.G. Lyublinskaya, B.Ya. Meltser, D.D. Solnyshkov, L.G. Prokopova, A.A. Sitnikova, A.A. Toropov, P.S. Kop'ev. J. Cryst. Growth, 278, 72, 2005
  • 11. V.A. Solov'ev, O.G. Lyublinskaya, B.Ya. Meltser, A.N. Semenov, D.D. Solnyshkov, A.A. Toropov, S.V. Ivanov, P.S. Kop'ev, Appl. Phys. Lett., 86, 011109, 2005
  • 12. V.A. Solov'ev, I.V. Sedova, O.G. Lyublinskaya, A.N. Semenov, B.Ya. Meltser, S.V. Sorokin, Ya.V. Terent'ev, S.V. Ivanov, Tech. Phys. Lett., 31, 235, 2005
  • 13. A.N. Semenov, V.S. Sorokin, V.A. Solov'ev, B.Ya. Mel'tser, S.V. Ivanov, Semiconductors, 38, 266, 2004
  • 14. G.S. Lee, Y. Lo, Y.F. Lin, S.M. Bedair, W.D. Laidig, Appl. Phys. Lett., 47, 1219, 1985
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv108n519kz
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.