Solid Phase Epitaxy of Ferromagnetic MnAs Layer and Quantum Dots on Annealed GaMnAs

• Authors: J. Sadowski , J. Kanski , M. Adell , J. Domagała , E. Janik , E. Łusakowska , R. Brucas , M. Hanson
• Languages of publication: EN

Abstracts

EN

We show that post growth annealing of GaMnAs under As capping at temperatures in the range of 180-210ºC leads to significant surface modifications. Depending on GaMnAs layer thickness and composition, we obtain either a smooth continuous reacted (MnAs) surface layer or 3D islands (quantum dots). The surface modifications are due to a solid phase epitaxial process, in which Mn interstitials diffusing to the GaMnAs surface are bound with the As.

Keywords

EN

81.10.Jt; 81.15.Hi; 68.65.Hb; 68.37.Ps

Discipline

• 68.65.Hb: Quantum dots (patterned in quantum wells)
• 81.10.Jt: Growth from solid phases (including multiphase diffusion and recrystallization)
• 81.15.Hi: Molecular, atomic, ion, and chemical beam epitaxy
• 68.37.Ps: Atomic force microscopy (AFM)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2005
• Volume: 108
• Issue: 5
• Pages: 851-858

Dates

published

2005-11

received

2005-06-04

Contributors

author

J. Sadowski

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
• Institut für Angewandte und Experimentalle Physik, Universität Regensburg, 93040 Regensburg, Germany

author

J. Kanski

• Department of Applied Physics, Chalmers University of Technology, 41296 Göteborg, Sweden

author

M. Adell

• Department of Applied Physics, Chalmers University of Technology, 41296 Göteborg, Sweden

author

J. Domagała

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

E. Janik

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

E. Łusakowska

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

R. Brucas

• Department of Applied Physics, Chalmers University of Technology, 41296 Göteborg, Sweden

author

M. Hanson

• Department of Applied Physics, Chalmers University of Technology, 41296 Göteborg, Sweden

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Identifiers

DOI

10.12693/APhysPolA.108.851