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2005 | 108 | 5 | 851-858
Article title

Solid Phase Epitaxy of Ferromagnetic MnAs Layer and Quantum Dots on Annealed GaMnAs

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Abstracts
EN
We show that post growth annealing of GaMnAs under As capping at temperatures in the range of 180-210ºC leads to significant surface modifications. Depending on GaMnAs layer thickness and composition, we obtain either a smooth continuous reacted (MnAs) surface layer or 3D islands (quantum dots). The surface modifications are due to a solid phase epitaxial process, in which Mn interstitials diffusing to the GaMnAs surface are bound with the As.
Keywords
Contributors
author
  • Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
  • Institut für Angewandte und Experimentalle Physik, Universität Regensburg, 93040 Regensburg, Germany
author
  • Department of Applied Physics, Chalmers University of Technology, 41296 Göteborg, Sweden
author
  • Department of Applied Physics, Chalmers University of Technology, 41296 Göteborg, Sweden
author
  • Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
author
  • Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
  • Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
author
  • Department of Applied Physics, Chalmers University of Technology, 41296 Göteborg, Sweden
author
  • Department of Applied Physics, Chalmers University of Technology, 41296 Göteborg, Sweden
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv108n518kz
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