Infrared Spectroscopy of GaAs Doped with Mn

• Authors: A. Rutkowska , D. Wasik , A. Witowski , M. Sadowski , W. Orłowski , G. Strzelecka , A. Hruban , M. Kamińska , A. Twardowski , M. Potemski
• Languages of publication: EN

Abstracts

EN

We found that the fine structure related to Lyman spectra of [Mn^{2+}(d^5) + a hole] centers in GaAs was present only for samples with low Mn concentration. Such samples, at low temperature, did not show any hopping conductance within Mn impurity band. Magnetooptical measurements revealed that magnetic field induced splitting of the Lyman optical transitions was larger than Zeeman splitting observed for typical shallow acceptors in GaAs, like Be, Zn, and C. This experimental result proved that in the case of Mn acceptor impurity, the exchange coupling of a hole and the S = 5/2 Mn^{2+}(d^5) core could not be neglected, which was in accordance with the [Mn^{2+}(d^5) + a hole] model of the neutral Mn center in GaAs.

Keywords

EN

71.70.Ej; 78.20.Ls; 78.30.Fs

Discipline

• 78.20.Ls: Magneto-optical effects(for magneto-optical devices, see 85.70.Sq)
• 71.70.Ej: Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect
• 78.30.Fs: III-V and II-VI semiconductors

• Journal: Acta Physica Polonica A
• Year: 2005
• Volume: 108
• Issue: 5
• Pages: 845-849

Dates

published

2005-11

received

2005-06-04

Contributors

author

A. Rutkowska

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland

author

D. Wasik

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland

author

A. Witowski

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland

author

M. Sadowski

• Grenoble High Magnetic Field Laboratory, 38 042 Grenoble Cedex 09, France

author

W. Orłowski

• Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland

author

G. Strzelecka

• Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland

author

A. Hruban

• Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland

author

M. Kamińska

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland

author

A. Twardowski

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland

author

M. Potemski

• Grenoble High Magnetic Field Laboratory, 38 042 Grenoble Cedex 09, France

References

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Identifiers

DOI

10.12693/APhysPolA.108.845