Hole Scattering in GaSb: Scattering on Space Charge Regions Versus Dipole Scattering

• Authors: B. Pődör
• Languages of publication: EN

Abstracts

EN

Hole concentration and mobility were investigated by Hall measurements in nominally undoped p-type GaSb in the temperature range from 77 to 300 K. The dependence of the thermal ionization energy of native acceptors on the acceptor centre concentration and on the compensation degree was determined. The temperature dependence of the hole mobility was analyzed using a heuristic semi-empirical model as well as using a phenomenological two-hole band model. Space charge scattering and/or dipole scattering described with a mobility contribution with a~ T^{-1/2} like temperature dependence dominated the hole mobility in the investigated temperature range.

Keywords

EN

72.20.Fr; 72.20.Dp; 72.80.Ey

Discipline

• 72.80.Ey: III-V and II-VI semiconductors
• 72.20.Dp: General theory, scattering mechanisms
• 72.20.Fr: Low-field transport and mobility; piezoresistance

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2005
• Volume: 108
• Issue: 5
• Pages: 837-844

Dates

published

2005-11

received

2005-06-04

Contributors

author

B. Pődör

• Budapest Tech, Kandó Kálmán Faculty of Electrical Engineering, Institute of Microelectronics and Technology, Taraszmező u. 17, 1084 Budapest, Hungary
• Hungarian Academy of Sciences, Research Institute for Technical Physics and Materials Science, P.O.B. 49, 1525 Budapest, Hungary

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Identifiers

DOI

10.12693/APhysPolA.108.837