PL EN


Preferences help
enabled [disable] Abstract
Number of results
2005 | 108 | 5 | 809-816
Article title

Pb_{1-x}Mn_xTe Crystals as a New Thermoelectric Material

Content
Title variants
Languages of publication
EN
Abstracts
EN
We studied experimentally thermoelectric properties of p-type bulk crystals of Pb_{1-x}Mn_xTe and Pb_{1-x-y}Ag_yMn_xTe (0≤ x≤ 0.083 and y≤0.017) at room and liquid nitrogen temperatures. Model calculations of the thermoelectric figure of merit parameter (Z) involved the analysis of carrier concentration, carrier mobility, density of states as well as electronic and lattice contributions to the thermal conductivity of PbMnTe. In the analysis we took into account the main effect of Mn concentration on the band structure parameters of PbMnTe, i.e. the increase of the energy gap. The analysis of electrical, thermoelectric, and thermal properties of Pb_{1-x}Mn_xTe crystals showed that, at room temperature, the maximum values of the parameter Z occur in crystals with Mn content 0.05≤ x≤0.07 and are comparable with a maximal value of Z observed in PbTe. At T=400 K the increase in the parameter Z by 10% is expected in Pb_{1-x}Mn_xTe crystal (as compared to PbTe) for a very high concentration of holes of about p=5×10^{19} cm^{-3}. The experimental data correctly reproduce the theoretical Z(p) dependence.
Keywords
EN
Year
Volume
108
Issue
5
Pages
809-816
Physical description
Dates
published
2005-11
received
2005-06-04
References
  • 1. G. Chen, M.S. Dresselhaus, G. Dresselhaus, J.-P. Fleurial, T. Caillat, Int. Mater. Rev., 48, 45, 2003
  • 2. G. Slack, in: CRC Handbook of Thermoelectrics, Ed. D.M. Rowe, CRC Press, Boca Raton 1995, p. 407
  • 3. D.T. Morelli, J.P. Heremans, C.M. Thrush, Phys. Rev. B, 67, 35206, 2003
  • 4. C. Wood, Reports on Progress in Physics, 51, 4, 1988
  • 5. T.C. Harman, J. Appl. Phys., 29, 1201, 57
  • 6. G.V. Lashkarev, M.V. Radchenko, F.F. Sizov, E.I. Slynko, V.V. Tetyorkin, Ukrainskii Fizicheskii Zhurnal, 26, 7, 1981
  • 7. W. Zawadzki, Adv. Phys., 23, 435, 74
  • 8. E.I. Rogachova, Jpn. J. Appl. Phys., 32S, 3, 1993
  • 9. E.I. Rogachova, I.M. Krivulkin, Fiz. Tverd. Tela, 43, 1000, 2001
  • 10. P. Lazarczyk, M.V. Radchenko, G.V. Lashkarev, T. Story, K. Dybko, R.R. Galazka, Semicond. Sci. Tech., 13, 989, 1998
Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv108n512kz
Identifiers
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.