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2005 | 108 | 5 | 789-794
Article title

Lattice Expansion of (Ga,Mn)As: The Role of Substitutional Mn and of the Compensating Defects

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EN
Abstracts
EN
We apply the density-functional technique to determine the lattice constant of GaAs supercells containing Mn_{Ga}, Mn_{int}, and As_{Ga} impurities, and use a linear interpolation to describe the dependence of the lattice constant a of Ga_{1-x}Mn_{x}As on the concentrations of these impurities. The results of the supercell calculations confirm that Mn_{Ga} does not contribute to the lattice expansion. The increase in a is due to both Mn_{int} and As_{Ga}, that are both created in the as-grown (Ga,Mn)As in proportion to x, and that are most probably present in a remarkable amount also in the best annealed materials.
Keywords
Year
Volume
108
Issue
5
Pages
789-794
Physical description
Dates
published
2005-11
received
2005-06-04
References
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Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv108n509kz
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