Journal
Article title
Authors
Title variants
Languages of publication
Abstracts
We provide numerical analysis of nonequilibrium carrier dynamics in GaN layers at interband photoexcitation by a picosecond light pulse. By solving the continuity equation for bipolar carrier plasma, we analyze spatial and temporal evolution of carrier density. We show that fast carrier diffusion to the bulk determines the carrier in-depth profile in GaN epilayers with a thickness larger than the carrier diffusion length. By integrating the carrier spatial profiles at experimental conditions, corresponding to time-resolved four-wave mixing and time-resolved photoluminescense we simulate the four-wave mixing and time-resolved photoluminescense kinetics in subnanosecond time domain. The modeling data using parameters of the studied GaN epilayers (their thickness, diffusion coefficient, carrier lifetime, and absorption coefficients at emission wavelengths) were compared with the experimental results. The analysis provided conditions at which the discrepancy between the measured carrier lifetime by time-resolved photoluminescense and time-resolved four-wave mixing may occur. For hydride-vapor phase epitaxy GaN layers with a large diffusion length, the fast photoluminescense kinetics are confirmed by modeling and experiments that they are due to diffusion governed carrier in-depth redistribution, while four-wave mixing kinetics remain insensitive for carrier in-depth redistribution.
Discipline
Journal
Year
Volume
Issue
Pages
781-787
Physical description
Dates
published
2005-11
received
2005-06-04
Contributors
author
- Department of Semiconductor Optoelectronics, Institute of Materials Science and Applied Research, Vilnius University, Sauletekio ave. 9 bld. 3, 10222 Vilnius, Lithuania
author
- Department of Semiconductor Optoelectronics, Institute of Materials Science and Applied Research, Vilnius University, Sauletekio ave. 9 bld. 3, 10222 Vilnius, Lithuania
References
- 1. K. Jarasiunas, T. Malinauskas, A. Kadys, R. Aleksiejunas, M. Sudzius, S. Miasojedovas, S. Jursenas, A. Zukauskas, D. Gogova, A. Kakanakova-Georgieva, E. Janzén, H. Larsson, B. Monemar, P. Gibart, B. Beaumont, Phys. Status Solidi C, 2, 1006, 2005
- 2. G.P. Yablonskii, A.L. Gurskii, V.N. Pavlovskii, E.V. Lutsenko,V.Z. Zubialevich, T.S. Shulga, A.I. Stognij, H. Kalisch, A. Szymakowski, R.H. Jansen, A. Alam, B. Schineller, M. Heuken, J. Cryst. Growth, 275, e1733, 2005
- 3. D. Gogova, A. Kasic, H. Larsson, C. Hemmingsson, B. Monemar, F. Tuomisto, K. Saarinen, L. Dobos, B. Pecz, P. Gibart, B. Beaumont, J. Appl. Phys., 96, 799, 2004
- 4. C.A. Hoffman, K. Jarasiunas, H.J. Gerritsen, A.V. Nurmikko, Appl. Phys. Lett., 33, 536, 1978
- 5. K. Jarasiunas, R. Aleksiejunas, T. Malinauskas, V. Gudelis, M. Sudzius, A. Maasdorf, F. Brunner, M. Weyers, Eur. Phys. J. Appl. Phys., 27, 181, 2004
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv108n508kz