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Number of results
2005 | 108 | 5 | 755-760

Article title

Carriers Diffusion in GaAs/AlAs Type II Quantum Well

Content

Title variants

Languages of publication

EN

Abstracts

EN
The micro-photoluminescence of GaAs/AlAs type II double quantum well structure is presented. The specific band alignment of the investigated system allows obtaining high concentration of long lived carriers. This enables us to study diffusion of carriers and/or indirect excitons. It was found that the carrier flow does not follow the classical diffusion equation and is driven by the potential modification due to the presence of photo created carriers.

Keywords

Year

Volume

108

Issue

5

Pages

755-760

Physical description

Dates

published
2005-11
received
2005-06-04

Contributors

author
  • Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland
author
  • Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland
author
  • Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland
author
  • Grenoble High Magnetic Field Laboratory, CNRS, Grenoble, France
  • Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland
  • Laboratoire de Photonique et de Nanostructures, CNRS, Marcoussis, France

References

  • 1. A. Wysmolek, M. Potemski, V. Thierry-Mieg, Physica E, 12, 876, 2002; A. Wysmolek, B. Chwalisz, M. Potemski, R. Stepniewski, A. Babiński, S. Raymond, V. Thierry-Mieg, Acta Phys. Pol. A, 106, 367, 2004
  • 2. L.V. Butov, A. Zrenner, G. Abstreiter, G. Bohm, G. Weimann, Phys. Rev. Lett., 73, 304, 1994
  • 3. D.W. Snoke, Y. Liu, Z. Voros, L. Pfeiffer, K. West, Solid State Commun., 134, 37, 2005

Document Type

Publication order reference

Identifiers

YADDA identifier

bwmeta1.element.bwnjournal-article-appv108n504kz
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