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2005 | 108 | 5 | 755-760
Article title

Carriers Diffusion in GaAs/AlAs Type II Quantum Well

Content
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Languages of publication
EN
Abstracts
EN
The micro-photoluminescence of GaAs/AlAs type II double quantum well structure is presented. The specific band alignment of the investigated system allows obtaining high concentration of long lived carriers. This enables us to study diffusion of carriers and/or indirect excitons. It was found that the carrier flow does not follow the classical diffusion equation and is driven by the potential modification due to the presence of photo created carriers.
Keywords
Year
Volume
108
Issue
5
Pages
755-760
Physical description
Dates
published
2005-11
received
2005-06-04
References
  • 1. A. Wysmolek, M. Potemski, V. Thierry-Mieg, Physica E, 12, 876, 2002; A. Wysmolek, B. Chwalisz, M. Potemski, R. Stepniewski, A. Babiński, S. Raymond, V. Thierry-Mieg, Acta Phys. Pol. A, 106, 367, 2004
  • 2. L.V. Butov, A. Zrenner, G. Abstreiter, G. Bohm, G. Weimann, Phys. Rev. Lett., 73, 304, 1994
  • 3. D.W. Snoke, Y. Liu, Z. Voros, L. Pfeiffer, K. West, Solid State Commun., 134, 37, 2005
Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv108n504kz
Identifiers
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