Carriers Diffusion in GaAs/AlAs Type II Quantum Well

• Authors: A. Lesiak , B. Chwalisz , A. Wysmołek , M. Potemski , R. Stępniewski , V. Thierry-Mieg
• Languages of publication: EN

Abstracts

EN

The micro-photoluminescence of GaAs/AlAs type II double quantum well structure is presented. The specific band alignment of the investigated system allows obtaining high concentration of long lived carriers. This enables us to study diffusion of carriers and/or indirect excitons. It was found that the carrier flow does not follow the classical diffusion equation and is driven by the potential modification due to the presence of photo created carriers.

Keywords

EN

78.55.Cr; 78.66.Fd; 78.67.Hc; 75.75.+a

Discipline

• 78.55.Cr: III-V semiconductors
• 78.67.Hc: Quantum dots
• 78.66.Fd: III-V semiconductors

• Journal: Acta Physica Polonica A
• Year: 2005
• Volume: 108
• Issue: 5
• Pages: 755-760

Dates

published

2005-11

received

2005-06-04

Contributors

author

A. Lesiak

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland

author

B. Chwalisz

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland

author

A. Wysmołek

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland

author

M. Potemski

• Grenoble High Magnetic Field Laboratory, CNRS, Grenoble, France

author

R. Stępniewski

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland

author

V. Thierry-Mieg

• Laboratoire de Photonique et de Nanostructures, CNRS, Marcoussis, France

References

• 1. A. Wysmolek, M. Potemski, V. Thierry-Mieg, Physica E, 12, 876, 2002; A. Wysmolek, B. Chwalisz, M. Potemski, R. Stepniewski, A. Babiński, S. Raymond, V. Thierry-Mieg, Acta Phys. Pol. A, 106, 367, 2004
• 2. L.V. Butov, A. Zrenner, G. Abstreiter, G. Bohm, G. Weimann, Phys. Rev. Lett., 73, 304, 1994
• 3. D.W. Snoke, Y. Liu, Z. Voros, L. Pfeiffer, K. West, Solid State Commun., 134, 37, 2005

Identifiers

DOI

10.12693/APhysPolA.108.755