Carriers Diffusion in GaAs/AlAs Type II Quantum Well

A. Lesiak; B. Chwalisz; A. Wysmołek; M. Potemski; R. Stępniewski; V. Thierry-Mieg

doi:10.12693/APhysPolA.108.755

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Acta Physica Polonica A

2005 | 108 | 5 | 755-760

Article title

Carriers Diffusion in GaAs/AlAs Type II Quantum Well

Authors

A. Lesiak , B. Chwalisz , A. Wysmołek , M. Potemski , R. Stępniewski , V. Thierry-Mieg

Content

http://przyrbwn.icm.edu.pl/APP/PDF/108/a108z504.pdf [remote]

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Abstracts

The micro-photoluminescence of GaAs/AlAs type II double quantum well structure is presented. The specific band alignment of the investigated system allows obtaining high concentration of long lived carriers. This enables us to study diffusion of carriers and/or indirect excitons. It was found that the carrier flow does not follow the classical diffusion equation and is driven by the potential modification due to the presence of photo created carriers.

Keywords

78.55.Cr 78.66.Fd 78.67.Hc 75.75.+a

Publisher

Institute of Physics, Polish Academy of Sciences

Journal

Acta Physica Polonica A

Year

2005

Volume

108

Issue

Pages

755-760

Physical description

Dates

published

2005-11

received

2005-06-04

References

1. A. Wysmolek, M. Potemski, V. Thierry-Mieg, Physica E, 12, 876, 2002; A. Wysmolek, B. Chwalisz, M. Potemski, R. Stepniewski, A. Babiński, S. Raymond, V. Thierry-Mieg, Acta Phys. Pol. A, 106, 367, 2004
2. L.V. Butov, A. Zrenner, G. Abstreiter, G. Bohm, G. Weimann, Phys. Rev. Lett., 73, 304, 1994
3. D.W. Snoke, Y. Liu, Z. Voros, L. Pfeiffer, K. West, Solid State Commun., 134, 37, 2005

Document Type

Publication order reference

YADDA identifier

bwmeta1.element.bwnjournal-article-appv108n504kz

Identifiers

DOI

10.12693/APhysPolA.108.755