Journal
Article title
Title variants
Languages of publication
Abstracts
The micro-photoluminescence of GaAs/AlAs type II double quantum well structure is presented. The specific band alignment of the investigated system allows obtaining high concentration of long lived carriers. This enables us to study diffusion of carriers and/or indirect excitons. It was found that the carrier flow does not follow the classical diffusion equation and is driven by the potential modification due to the presence of photo created carriers.
Journal
Year
Volume
Issue
Pages
755-760
Physical description
Dates
published
2005-11
received
2005-06-04
Contributors
author
- Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland
author
- Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland
author
- Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland
author
- Grenoble High Magnetic Field Laboratory, CNRS, Grenoble, France
author
- Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland
author
- Laboratoire de Photonique et de Nanostructures, CNRS, Marcoussis, France
References
- 1. A. Wysmolek, M. Potemski, V. Thierry-Mieg, Physica E, 12, 876, 2002; A. Wysmolek, B. Chwalisz, M. Potemski, R. Stepniewski, A. Babiński, S. Raymond, V. Thierry-Mieg, Acta Phys. Pol. A, 106, 367, 2004
- 2. L.V. Butov, A. Zrenner, G. Abstreiter, G. Bohm, G. Weimann, Phys. Rev. Lett., 73, 304, 1994
- 3. D.W. Snoke, Y. Liu, Z. Voros, L. Pfeiffer, K. West, Solid State Commun., 134, 37, 2005
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv108n504kz