Fabrication and Physical Properties of SiC-GaAs Nano-Composites

• Authors: G. Kalisz , E. Grzanka , D. Wasik , A. Świderska-Środa , S. Gierlotka , J. Borysiuk , M. Kamińska , A. Twardowski , B. Pałosz
• Languages of publication: EN

Abstracts

EN

Nano-composites consisting of primary phase of hard nanocrystalline SiC matrix and the secondary nanocrystalline semiconductor (GaAs) phase were obtained by high-pressure zone infiltration. The synthesis process occurs in three stages: (i) at room temperature the nanopowder of SiC is compacted along with GaAs under high pressure up to 8 GPa, (ii) the temperature is increased above the melting point of GaAs up to 1600~K and, the pores are being filled with liquid, (iii) upon cooling GaAs nanocrystallites grow in the pores. Synthesis of nano-composites was performed using a toroid-type high-pressure apparatus (IHPP of the Polish Academy of Sciences, Warsaw) and six-anvil cubic press (MAX-80 at HASYLAB, Hamburg). X-ray diffraction studies were performed using a laboratory D5000 Siemens diffractometer. Phase composition, grain size, and macrostrains present in the synthesized materials were examined. Microstructure of the composites was characterized using scanning electron microscopy and high resolution transmission electron microscopy. Far-infrared reflectivity measurements were used to determine built-in strain.

Keywords

EN

81.07.-b; 07.35.+k

Discipline

• 07.35.+k: High-pressure apparatus; shock tubes; diamond anvil cells
• 81.07.-b: Nanoscale materials and structures: fabrication and characterization(for structure of nanoscale materials, see 61.46.-w; for nanostructured materials in electrochemistry, see 82.45.Yz; see also 62.23.-c Structural classes of nanoscale systems in mechanical properties of condensed matter)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2005
• Volume: 108
• Issue: 4
• Pages: 717-721

Dates

published

2005-10

received

2005-06-04

Contributors

author

G. Kalisz

• Institute of High Pressure Physics, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warsaw, Poland

author

E. Grzanka

• Institute of High Pressure Physics, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warsaw, Poland

author

D. Wasik

• Institute of Experimental Physics, Warsaw University, Warsaw, Poland

author

A. Świderska-Środa

• Institute of High Pressure Physics, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warsaw, Poland

author

S. Gierlotka

• Institute of High Pressure Physics, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warsaw, Poland

author

J. Borysiuk

• Institute of High Pressure Physics, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warsaw, Poland

author

M. Kamińska

• Institute of Experimental Physics, Warsaw University, Warsaw, Poland

author

A. Twardowski

• Institute of Experimental Physics, Warsaw University, Warsaw, Poland

author

B. Pałosz

• Institute of High Pressure Physics, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warsaw, Poland

References

• 1. M. Sternitzke, J. Eur. Ceram. Soc., 917, 1061, 1997
• 2. E.A. Ekimov, A.G. Gavriliuk, B. Palosz, S. Gierlotka, P. Dluzewski, E. Tatianin, Yu. Kluev, A.M. Naletov, P. Biczyk, A. Grzegorczyk, A. Presz, Appl. Phys. Lett., 77, 954, 2000
• 3. S. Gierlotka, B. Palosz, A. Świderska-Środa, E. Grzanka, G. Kalisz, R. Fedyk, S. Stel'makh, Solid State Phenomena, 101-102, 157, 2005
• 4. O. Shimomura, Solid State Physics under Pressure, D. Reidel Publ. Comp., Dordrecht 1985
• 5. E. Grzanka, S. Gierlotka, B. Palosz, A. Grzegorczyk, P. Biczyk, R. Pielaszek, U. Bismayer, HASYLAB Annual Report, Hamburg 2000, p. 556
• 6. F. Huisken, B. Kohn, R. Alexandescu, S. Cojocaru, A. Crunteanu, C. Reynaud, G. Ledoux, J. Nanopart. Res., 1, 293, 1999

Identifiers

DOI

10.12693/APhysPolA.108.717