PL EN


Preferences help
enabled [disable] Abstract
Number of results
2005 | 108 | 4 | 717-721
Article title

Fabrication and Physical Properties of SiC-GaAs Nano-Composites

Content
Title variants
Languages of publication
EN
Abstracts
EN
Nano-composites consisting of primary phase of hard nanocrystalline SiC matrix and the secondary nanocrystalline semiconductor (GaAs) phase were obtained by high-pressure zone infiltration. The synthesis process occurs in three stages: (i) at room temperature the nanopowder of SiC is compacted along with GaAs under high pressure up to 8 GPa, (ii) the temperature is increased above the melting point of GaAs up to 1600~K and, the pores are being filled with liquid, (iii) upon cooling GaAs nanocrystallites grow in the pores. Synthesis of nano-composites was performed using a toroid-type high-pressure apparatus (IHPP of the Polish Academy of Sciences, Warsaw) and six-anvil cubic press (MAX-80 at HASYLAB, Hamburg). X-ray diffraction studies were performed using a laboratory D5000 Siemens diffractometer. Phase composition, grain size, and macrostrains present in the synthesized materials were examined. Microstructure of the composites was characterized using scanning electron microscopy and high resolution transmission electron microscopy. Far-infrared reflectivity measurements were used to determine built-in strain.
Keywords
EN
Contributors
author
  • Institute of High Pressure Physics, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warsaw, Poland
author
  • Institute of High Pressure Physics, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warsaw, Poland
author
  • Institute of Experimental Physics, Warsaw University, Warsaw, Poland
  • Institute of High Pressure Physics, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warsaw, Poland
author
  • Institute of High Pressure Physics, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warsaw, Poland
author
  • Institute of High Pressure Physics, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warsaw, Poland
author
  • Institute of Experimental Physics, Warsaw University, Warsaw, Poland
author
  • Institute of Experimental Physics, Warsaw University, Warsaw, Poland
author
  • Institute of High Pressure Physics, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warsaw, Poland
References
  • 1. M. Sternitzke, J. Eur. Ceram. Soc., 917, 1061, 1997
  • 2. E.A. Ekimov, A.G. Gavriliuk, B. Palosz, S. Gierlotka, P. Dluzewski, E. Tatianin, Yu. Kluev, A.M. Naletov, P. Biczyk, A. Grzegorczyk, A. Presz, Appl. Phys. Lett., 77, 954, 2000
  • 3. S. Gierlotka, B. Palosz, A. Świderska-Środa, E. Grzanka, G. Kalisz, R. Fedyk, S. Stel'makh, Solid State Phenomena, 101-102, 157, 2005
  • 4. O. Shimomura, Solid State Physics under Pressure, D. Reidel Publ. Comp., Dordrecht 1985
  • 5. E. Grzanka, S. Gierlotka, B. Palosz, A. Grzegorczyk, P. Biczyk, R. Pielaszek, U. Bismayer, HASYLAB Annual Report, Hamburg 2000, p. 556
  • 6. F. Huisken, B. Kohn, R. Alexandescu, S. Cojocaru, A. Crunteanu, C. Reynaud, G. Ledoux, J. Nanopart. Res., 1, 293, 1999
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv108n417kz
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.