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2005 | 108 | 4 | 705-710
Article title

Photoluminescence Study of Bulk GaN Doped with Beryllium

Content
Title variants
Languages of publication
EN
Abstracts
EN
Photoluminescence of bulk GaN:Be grown by high pressure method is presented. The investigated crystals show well-resolved photoluminescence due to free and bound excitons similar to that observed for homoeptitaxial GaN layers. In addition to the excitonic transitions, pronounced luminescence band at 3.38 eV, due to Be acceptor, is observed. It was found that temperature behavior of this emission is typical of donor- and conduction band-acceptor transitions. The optical activation energy of Be acceptor is obtained to be of 60±15 meV.
Keywords
EN
Year
Volume
108
Issue
4
Pages
705-710
Physical description
Dates
published
2005-10
received
2005-06-04
Contributors
author
  • Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland
author
  • Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland
author
  • Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland
author
  • Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland
author
  • Institute of High Pressure Physics, Polish Academy of Sciences, Warsaw, Poland
author
  • Institute of High Pressure Physics, Polish Academy of Sciences, Warsaw, Poland
References
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  • 6. K. Pakula, A. Wysmolek, K.P. Korona, J.M. Baranowski, R. Stepniewski, I. Grzegory, M. Bockowski, J. Jun, S. Krukowski, M. Wroblewski, S. Porowski, Solid State Commun., 97, 919, 1996
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  • 8. K.P. Korona, A. Wysmolek, K. Pakula, R. Stepniewski, J.M. Baranowski, I. Grzegory, B. Lucznik, M. Wróblewski, S. Porowski, Appl. Phys. Lett., 69, 788, 1996
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv108n415kz
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