Photoluminescence Study of Bulk GaN Doped with Beryllium

• Authors: M. Jaworek , A. Wysmołek , M. Kamińska , A. Twardowski , M. Boćkowski , I. Grzegory
• Languages of publication: EN

Abstracts

EN

Photoluminescence of bulk GaN:Be grown by high pressure method is presented. The investigated crystals show well-resolved photoluminescence due to free and bound excitons similar to that observed for homoeptitaxial GaN layers. In addition to the excitonic transitions, pronounced luminescence band at 3.38 eV, due to Be acceptor, is observed. It was found that temperature behavior of this emission is typical of donor- and conduction band-acceptor transitions. The optical activation energy of Be acceptor is obtained to be of 60±15 meV.

Keywords

EN

78.55.Cr; 71.55.-i; 71.35.-y

Discipline

• 78.55.Cr: III-V semiconductors
• 71.35.-y: Excitons and related phenomena
• 71.55.-i: Impurity and defect levels

• Journal: Acta Physica Polonica A
• Year: 2005
• Volume: 108
• Issue: 4
• Pages: 705-710

Dates

published

2005-10

received

2005-06-04

Contributors

author

M. Jaworek

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland

author

A. Wysmołek

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland

author

M. Kamińska

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland

author

A. Twardowski

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland

author

M. Boćkowski

• Institute of High Pressure Physics, Polish Academy of Sciences, Warsaw, Poland

author

I. Grzegory

• Institute of High Pressure Physics, Polish Academy of Sciences, Warsaw, Poland

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Identifiers

DOI

10.12693/APhysPolA.108.705