Light Emission Properties of GaN-Based Laser Diode Structures

• Authors: M. Godlewski , M. Phillips , R. Czernecki , G. Targowski , P. Perlin , M. Leszczyński , S. Figge , D. Hommel
• Languages of publication: EN

Abstracts

EN

Cathodoluminescence is applied for evaluation of in-depth and in-plane variations of light emission from two types of GaN-based laser diode structures. We evaluate in-depth properties of the laser diode emission and demonstrate that potential fluctuations still affect emission of laser diodes for e-beam currents above thresholds for a stimulated emission.

Keywords

EN

85.30.-z; 78.60.Hk; 68.37.Hk

Discipline

• 85.30.-z: Semiconductor devices(for photodiodes, phototransistors, and photoresistors, see 85.60.Dw; for laser diodes, see 42.55.Px; for semiconductor-based solar cells, see 88.40.-j; for applications of dielectric films in silicon electronics, see 77.55.df)
• 68.37.Hk: Scanning electron microscopy (SEM) (including EBIC)
• 78.60.Hk: Cathodoluminescence, ionoluminescence

• Journal: Acta Physica Polonica A
• Year: 2005
• Volume: 108
• Issue: 4
• Pages: 675-680

Dates

published

2005-10

received

2005-06-04

Contributors

author

M. Godlewski

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

M. Phillips

• Microstructural Analysis Unit, UTS, Sydney, Australia

author

R. Czernecki

• Institute of High Pressure Physics (Unipress), Polish Academy of Sciences, Warsaw, Poland

author

G. Targowski

• Institute of High Pressure Physics (Unipress), Polish Academy of Sciences, Warsaw, Poland

author

P. Perlin

• Institute of High Pressure Physics (Unipress), Polish Academy of Sciences, Warsaw, Poland

author

M. Leszczyński

• Institute of High Pressure Physics (Unipress), Polish Academy of Sciences, Warsaw, Poland

author

S. Figge

• Institute of Solid State Physics, University of Bremen, 28334 Bremen, Germany

author

D. Hommel

• Institute of Solid State Physics, University of Bremen, 28334 Bremen, Germany

References

• 1. S. Nakamura, G. Fasol, The Blue Laser Diode, Springer Verlag, Berlin 1997
• 2. M. Godlewski, V.Yu. Ivanov, E.M. Goldys, M. Phillips, T. Bottcher, S. Figge, D. Hommel, R. Czernecki, P. Prystawko, M. Leszczynski, P. Perlin, I. Grzegory, S. Porowski, Acta Phys. Pol. A, 103, 689, 2003
• 3. M. Godlewski, A. Kozanecki, chapter in: Handbook of Electroluminescent Materials, Ed. D.R. Vij, Institute of Physics Publishing of U.K., IOP Publishing Bristol 2004, p. 348
• 4. M. Godlewski, E.M. Goldys, M.R. Phillips, R. Langer, A. Barski, J. Mater. Res., 15, 495, 2000
• 5. M. Godlewski, E.M. Goldys, M.R. Phillips, K. Pakula, J.M. Baranowski, Appl. Surf. Sci., 177, 22, 2001
• 6. M. Godlewski, E.M. Goldys, chapter in: III-Nitride Semiconductors: Optical Properties, in series: Optoelectronic Properties of Semiconductors and Superlattices, Eds. Hongxing Jiang, M. Omar Manasreh, Vol. II, Taylor & Francis Books, New York 2002, p. 259
• 7. M. Godlewski, E. Lusakowska, E.M. Goldys, M.R. Phillips, T. Botcher, S. Figge, D. Hommel, P. Prystawko, M. Leszczynski, I. Grzegory, S. Porowski, Appl. Surf. Sci., 223, 294, 2004

Identifiers

DOI

10.12693/APhysPolA.108.675