Journal
Article title
Authors
Title variants
Languages of publication
Abstracts
Cathodoluminescence is applied for evaluation of in-depth and in-plane variations of light emission from two types of GaN-based laser diode structures. We evaluate in-depth properties of the laser diode emission and demonstrate that potential fluctuations still affect emission of laser diodes for e-beam currents above thresholds for a stimulated emission.
Discipline
- 85.30.-z: Semiconductor devices(for photodiodes, phototransistors, and photoresistors, see 85.60.Dw; for laser diodes, see 42.55.Px; for semiconductor-based solar cells, see 88.40.-j; for applications of dielectric films in silicon electronics, see 77.55.df)
- 68.37.Hk: Scanning electron microscopy (SEM) (including EBIC)
- 78.60.Hk: Cathodoluminescence, ionoluminescence
Journal
Year
Volume
Issue
Pages
675-680
Physical description
Dates
published
2005-10
received
2005-06-04
Contributors
author
- Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
author
- Microstructural Analysis Unit, UTS, Sydney, Australia
author
- Institute of High Pressure Physics (Unipress), Polish Academy of Sciences, Warsaw, Poland
author
- Institute of High Pressure Physics (Unipress), Polish Academy of Sciences, Warsaw, Poland
author
- Institute of High Pressure Physics (Unipress), Polish Academy of Sciences, Warsaw, Poland
author
- Institute of High Pressure Physics (Unipress), Polish Academy of Sciences, Warsaw, Poland
author
- Institute of Solid State Physics, University of Bremen, 28334 Bremen, Germany
author
- Institute of Solid State Physics, University of Bremen, 28334 Bremen, Germany
References
- 1. S. Nakamura, G. Fasol, The Blue Laser Diode, Springer Verlag, Berlin 1997
- 2. M. Godlewski, V.Yu. Ivanov, E.M. Goldys, M. Phillips, T. Bottcher, S. Figge, D. Hommel, R. Czernecki, P. Prystawko, M. Leszczynski, P. Perlin, I. Grzegory, S. Porowski, Acta Phys. Pol. A, 103, 689, 2003
- 3. M. Godlewski, A. Kozanecki, chapter in: Handbook of Electroluminescent Materials, Ed. D.R. Vij, Institute of Physics Publishing of U.K., IOP Publishing Bristol 2004, p. 348
- 4. M. Godlewski, E.M. Goldys, M.R. Phillips, R. Langer, A. Barski, J. Mater. Res., 15, 495, 2000
- 5. M. Godlewski, E.M. Goldys, M.R. Phillips, K. Pakula, J.M. Baranowski, Appl. Surf. Sci., 177, 22, 2001
- 6. M. Godlewski, E.M. Goldys, chapter in: III-Nitride Semiconductors: Optical Properties, in series: Optoelectronic Properties of Semiconductors and Superlattices, Eds. Hongxing Jiang, M. Omar Manasreh, Vol. II, Taylor & Francis Books, New York 2002, p. 259
- 7. M. Godlewski, E. Lusakowska, E.M. Goldys, M.R. Phillips, T. Botcher, S. Figge, D. Hommel, P. Prystawko, M. Leszczynski, I. Grzegory, S. Porowski, Appl. Surf. Sci., 223, 294, 2004
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv108n411kz