Defects in Dilute Nitrides

• Authors: W. Chen , I. Buyanova , C. Tu , H. Yonezu
• Languages of publication: EN

Abstracts

EN

We provide a brief review of our recent results from optically detected magnetic resonance studies of grown-in non-radiative defects in dilute nitrides, i.e. Ga(In)NAs and Ga(Al,In)NP. Defect complexes involving intrinsic defects such as As_a antisites and Ga_i self-interstitials were positively identified. Effects of growth conditions, chemical compositions and post-growth treatments on formation of the defects are closely examined. These grown-in defects are shown to play an important role in non-radiative carrier recombination and thus in degrading optical quality of the alloys, harmful to performance of potential optoelectronic and photonic devices based on these dilute nitrides.

Keywords

EN

61.72.Ji; 71.55.Eq; 76.70.Hb

Discipline

• 71.55.Eq: III-V semiconductors
• 76.70.Hb: Optically detected magnetic resonance (ODMR)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2005
• Volume: 108
• Issue: 4
• Pages: 571-579

Dates

published

2005-10

received

2005-06-04

Contributors

author

W. Chen

• Department of Physics and Measurement Technology, Linköping University, 58183 Linköping, Sweden

author

I. Buyanova

• Department of Physics and Measurement Technology, Linköping University, 58183 Linköping, Sweden

author

C. Tu

• Department of Electrical and Computer Engineering, University of California, La Jolla, CA, 92093-0407, USA

author

H. Yonezu

• Department of Electrical and Electronic Engineering, Toyohashi University of Technology, Toyohashi, Aichi, 441-8580, Japan

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Identifiers

DOI

10.12693/APhysPolA.108.571