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2005 | 108 | 4 | 571-579
Article title

Defects in Dilute Nitrides

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Languages of publication
EN
Abstracts
EN
We provide a brief review of our recent results from optically detected magnetic resonance studies of grown-in non-radiative defects in dilute nitrides, i.e. Ga(In)NAs and Ga(Al,In)NP. Defect complexes involving intrinsic defects such as As_a antisites and Ga_i self-interstitials were positively identified. Effects of growth conditions, chemical compositions and post-growth treatments on formation of the defects are closely examined. These grown-in defects are shown to play an important role in non-radiative carrier recombination and thus in degrading optical quality of the alloys, harmful to performance of potential optoelectronic and photonic devices based on these dilute nitrides.
Keywords
EN
Publisher

Year
Volume
108
Issue
4
Pages
571-579
Physical description
Dates
published
2005-10
received
2005-06-04
Contributors
author
  • Department of Physics and Measurement Technology, Linköping University, 58183 Linköping, Sweden
author
  • Department of Physics and Measurement Technology, Linköping University, 58183 Linköping, Sweden
author
  • Department of Electrical and Computer Engineering, University of California, La Jolla, CA, 92093-0407, USA
author
  • Department of Electrical and Electronic Engineering, Toyohashi University of Technology, Toyohashi, Aichi, 441-8580, Japan
References
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv108n404kz
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