Annealing Study of Al/GaSb Contact with the Use of Doppler Broadening Technique

• Authors: H. Wang , H. Weng , C. Ling , B. Ye , X. Zhou , R. Han
• Languages of publication: EN

Abstracts

EN

Using a monoenergetic positron beam, annealing study of the Al/n-GaSb system was performed by monitoring the Doppler broadening of the annihilation radiation as a function of the positron implanting energy. The S-parameter against positron energy data was successfully fitted by a three-layer model (Al/interface/GaSb). The annealing out of the open volume defects in the polycrystalline Al layer was revealed by the decrease in the S-parameter and the increase in the effective diffusion length of the Al layer. For the as-deposited samples, a 5 nm interfacial region with S-parameter larger than those of the Al overlayer and the bulk was identified. After the 400ºC annealing, this interfacial region extends to over 40 nm and its S-parameter dramatically drops. This is possibly due to the new phase formation at the interface. Annealing behaviors of S_B and L_{+,B} of the GaSb bulk showed the annealing out of positron traps (possibly the V_{Ga}-related defect) at 250ºC. However, a further annealing at 400ºC induces the formation of positron traps, which are possibly of another kind of V_{Ga}-related defect and the positron shallow trap GaSb antisite.

Keywords

EN

78.70.Bj; 68.35.Ct; 73.40.Sx

Discipline

• 78.70.Bj: Positron annihilation(for positron states, see 71.60.+z in electronic structure of bulk materials; for positronium chemistry, see 82.30.Gg in physical chemistry and chemical physics)
• 68.35.Ct: Interface structure and roughness
• 73.40.Sx: Metal-semiconductor-metal structures

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2005
• Volume: 107
• Issue: 5
• Pages: 874-879

Dates

published

2005-05

received

2004-09-20

Contributors

author

H. Wang

• Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong, People's Republic of China
• Department of Modern Physics, University of Science and Technology of China, Hefei 230026, People's Republic of China

author

H. Weng

• Department of Modern Physics, University of Science and Technology of China, Hefei 230026, People's Republic of China

author

C. Ling

• Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong, People's Republic of China

author

B. Ye

• Department of Modern Physics, University of Science and Technology of China, Hefei 230026, People's Republic of China

author

X. Zhou

• Department of Modern Physics, University of Science and Technology of China, Hefei 230026, People's Republic of China

author

R. Han

• Department of Modern Physics, University of Science and Technology of China, Hefei 230026, People's Republic of China

References

• 1. P.S. Dutta, H.L. Bhat, J. Appl. Phys., 81, 5821, 1997
• 2. P.W. Chye, T. Sukegawa, I.A. Babaola, N. Sunami, P. Gregory, W.E. Spicer, Phys. Rev. B, 15, 2118, 1977
• 3. I. Poole, M.E. Lee, M. Missous, K.E. Singer, J. Appl. Phys., 62, 3988, 1987
• 4. S.A. Walters, R.H. Williams, J. Vac. Sci. Technol. B, 6, 1421, 1988
• 5. W. Mason, J.R. Waterman, J. Appl. Phys., 84, 1426, 1998
• 6. A. Subekti, T.L. Tansley, E.M. Goldys, IEEE Trans. Elect. Dev., 45, 2247, 1998
• 7. A.Y. Polyakov, M. Stam, A.G. Milnes, T.E. Schlesinger, Mater. Sci. Eng. B, 12, 337, 1992
• 8. F.S. Juang, Y.K. Su, Solid-State Electron., 32, 661, 1989
• 9. C.C. Ling, T.C. Lee, S. Fung, C.D. Beling, Huimin Weng, Jihua Xu, Shijun Sun, Rongdian Han, J. Phys., Condens. Matter, 6, 1133, 1994
• 10. C.C. Ling, T.C. Lee, S. Fung, C.D. Beling, Huimin Weng, Jihua Xu, Shijun Sun, Rongdian Han, Appl. Surf. Sci., 85, 305, 1995
• 11. A. Uedono, S. Fujii, T. Moriya, T. Kawano, S. Tanigawa, R. Suzuki, T. Ohdaira, T. Mikado, J. Phys., Condens. Matter, 9, 6827, 1997
• 12. Ping Li, Chenglu Lin, Zuyao Zhou, Shichang Zou, Huimin Weng, Rongdian Han, Bingzong Li, Appl. Phys. Lett., 64, 2501, 1994
• 13. J.L. Lee, J.K. Kim, M.H. Weber, K.G. Lynn, Appl. Phys. Lett., 78, 4142, 2001
• 14. A. van Veen, H. Schut, J. de Vries, R.A. Hakvoort, M.R. Ijpma, in: Positron Beams for Solids and Surfaces, AIP Conf. Proc., Eds. P.J. Schultz, G.R. Massoumi, P.J. Simpson, Vol. 218, AIP, New York 1990, p. 171
• 15. M. Missous, E.H. Rhoderick, K.E. Singer, J. Appl. Phys., 59, 3189, 1986
• 16. W. Oueini, M. Rouanet, J. Bonnet, Surf. Sci., 409, 445, 1998
• 17. Y. Rouillard, B. Jenichen, L. Daweritz, K. Ploog, C. Gerardi, C. Giannini, L. De Caro, L. Tapfer, J. Crystal Growth, 204, 263, 1999
• 18. I. Poole, M.E. Lee, K.E. Singer, Semicond. Sci. Technol., 6, 881, 1991
• 19. C.C. Ling, M.K. Lui, S.K. Ma, X.D. Chen, S. Fung, C.D. Beling, Appl. Phys. Lett., 85, 384, 2004
• 20. S.K. Ma, M.K. Lui, C.C. Ling, S. Fung, C.D. Beling, K.F. Li, K.W. Cheah, M. Gong, H.S. Hang, H.M. Weng, J. Phys., Condens. Matter, 16, 6205, 2004

Identifiers

DOI

10.12693/APhysPolA.107.874