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Abstracts
An approach to structural characterization of chalcogenide glasses based on the study of void distribution is discussed. The results of positron annihilation lifetime spectra measurements for glassy-like g-As_2Se_3 are compared with nano-void distribution data obtained from Monte Carlo simulation. In this consideration perspectives to involve the parameters of nano-voids calculated from the first sharp diffraction peak in the framework of known Elliott's model are analyzed.
Discipline
Journal
Year
Volume
Issue
Pages
832-836
Physical description
Dates
published
2005-05
received
2004-09-20
Contributors
author
- Physics Laboratory, Opole Technical University, Ozimska 75, 45-370 Opole, Poland
author
- Institute of Materials, Scientific Research Company "Carat", Stryjska 202, 79031 Lviv, Ukraine
- Institute of Physics, Jan Dlugosz University, Al. Armii Krajowej 13/15, 42-201 Częstochowa, Poland
author
- Institute of Materials, Scientific Research Company "Carat", Stryjska 202, 79031 Lviv, Ukraine
author
- Institute of Physics, Jan Dlugosz University, Al. Armii Krajowej 13/15, 42-201 Częstochowa, Poland
References
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- 7. J. Kansy, Nucl. Instrum. Methods Phys. Res. A, 374, 235, 1996
- 8. R. Krause-Rehberg, H.S. Leipner, Positron Annihilation in Semiconductors. Defect Studies, Springer-Verlag, New York 1999
- 9. O. Shpotyuk, J. Filipecki, Free Volume in Vitreous Chalcogenide Semiconductors: Possibilities of Positron Annihilation Lifetime Study, WSP, Czestochowa 2003, p. 114
- 10. M.A. Popescu, J. Non-Cryst. Solids, 35-36, 549, 1980
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv107n518kz