Defect Study on Deformed Fe-Si Alloys by Positron Annihilation Techniques

• Authors: K. Chou , J. De Baerdemaeker , V. Peral , D. Ruiz , Y. Houbaert , D. Segers
• Languages of publication: EN

Abstracts

EN

A set of Fe-Si samples with different Si content, varying from 0 to 7.6 wt.%, was investigated using positron annihilation spectroscopy. Different deformations were performed on these samples and the lineshape parameters of the annihilation line were measured in order to investigate the defects in the alloys. An exponential decay of the S-parameter in function of the time can be observed after deformation of the samples. The decay constant increases with increasing Si content. During the measurements of the samples with increasing Si content, the initiation of DO_3 structure can be seen above 5 wt.% of Si, as well as the decoration by impurities.

Keywords

EN

71.60.+z; 78.70.Bj

Discipline

• 78.70.Bj: Positron annihilation(for positron states, see 71.60.+z in electronic structure of bulk materials; for positronium chemistry, see 82.30.Gg in physical chemistry and chemical physics)
• 71.60.+z: Positron states(for positron annihilation, see 78.70.Bj)

• Journal: Acta Physica Polonica A
• Year: 2005
• Volume: 107
• Issue: 5
• Pages: 799-804

Dates

published

2005-05

received

2004-09-20

Contributors

author

K. Chou

• Ghent University, Dpt. Subatomic and Radiation Physics, Proeftuinstraat 86, 9000 Gent, Belgium

author

J. De Baerdemaeker

• Ghent University, Dpt. Subatomic and Radiation Physics, Proeftuinstraat 86, 9000 Gent, Belgium

author

V. Peral

• Ghent University, Dpt. Metallurgy and Materials Science, Technologiepark 903, 9052, Gent, Belgium

author

D. Ruiz

• Ghent University, Dpt. Metallurgy and Materials Science, Technologiepark 903, 9052, Gent, Belgium

author

Y. Houbaert

• Ghent University, Dpt. Metallurgy and Materials Science, Technologiepark 903, 9052, Gent, Belgium

author

D. Segers

• Ghent University, Dpt. Subatomic and Radiation Physics, Proeftuinstraat 86, 9000 Gent, Belgium

References

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• 3. S. Matsumura, Y. Tanaka, Y. Koga, K. Oki, Mater. Sci. Eng. A, 312, 284, 2001
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• 5. D. Ruiz, T. Ros-Yanes, R.E. Vandenberghe, E. De Grave, M. De Wulf, Y. Houbaert, J. Appl. Phys., 93, 7112, 2003
• 6. Y. Nagai, K. Takadate, Z. Tang, H. Ohkubo, H. Sunaga, H. Takizawa, M. Hasegawa, Phys. Rev. B, 67, 224202, 2003

Identifiers

DOI

10.12693/APhysPolA.107.799