Dynamics of the Intraband Light Absorption in Selectively Doped GaAs/AlGaAs Quantum Wells

• Authors: L. Vorobjev , V. Panevin , N. Fedosov , D. Firsov , V. Shalygin , A. Seilmeier , S. Schmidt , E. Zibik , E. Towe , V. Kapaev
• Languages of publication: EN

Abstracts

EN

Spectral and temperature dependences of equilibrium and non-equi-intersubband light absorption in the mid-infrared spectral range were studied in selectively doped asymmetrical tunnel-coupled GaAs/AlGaAs quantum wells. The temporal evolution of the absorption studied by means of a picosecond pump-probe technique was found to have a biexponential character. The fast decay times are determined by intersubband electron relaxation due to electron scattering by optical phonons and impurities. The presence of long decay times in transient mid-infrared absorption is probably connected with electron transitions from the states in barrier (X and L valleys as well as deep centers) to the states of the quantum well. Experimentally determined intersubband scattering times are compared with the calculated ones.

Keywords

EN

42.55.Px; 42.60.-v

Discipline

• 42.60.-v: Laser optical systems: design and operation
• 42.55.Px: Semiconductor lasers; laser diodes

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2005
• Volume: 107
• Issue: 2
• Pages: 429-434

Dates

published

2005-02

received

2004-08-22

Contributors

author

L. Vorobjev

• Saint Petersburg State Polytechnic University, St. Petersburg 195251, Russia

author

V. Panevin

• Saint Petersburg State Polytechnic University, St. Petersburg 195251, Russia

author

N. Fedosov

• Saint Petersburg State Polytechnic University, St. Petersburg 195251, Russia

author

D. Firsov

• Saint Petersburg State Polytechnic University, St. Petersburg 195251, Russia

author

V. Shalygin

• Saint Petersburg State Polytechnic University, St. Petersburg 195251, Russia

author

A. Seilmeier

• Institute of Physics, University of Bayreuth, Bayreuth 95440, Germany

author

S. Schmidt

• Institute of Physics, University of Bayreuth, Bayreuth 95440, Germany

author

E. Zibik

• Institute of Physics, University of Bayreuth, Bayreuth 95440, Germany

author

E. Towe

• Carnegie Mellon University, Pittsburgh PA 15213, USA

author

V. Kapaev

• P.N. Lebedev Physical Institute RAS, Moscow 117924, Russia

References

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Identifiers

DOI

10.12693/APhysPolA.107.429