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2005 | 107 | 2 | 408-411
Article title

Monte Carlo Calculation of High Frequency Mobility and Diffusion Noise in Nitride-Based Semiconductors

Content
Title variants
Languages of publication
EN
Abstracts
FR
Monte Carlo simulations of high-field transport in semiconductor nitrides, GaN and InN, is used to calculate the velocity-field characteristics and the high-frequency behavior of the differential mobility, spectral density of velocity fluctuations, and noise temperature. It is found that due to very short relaxation time scales of nitrides, the characteristic frequencies associated with extrema and cutoff decay of the negative differential mobility, etc. are shifted to higher frequency range with respect to the case of standard A_3B_5 compounds. This property is favorable for applications of nitrides in the THz frequency range.
Keywords
EN
Publisher

Year
Volume
107
Issue
2
Pages
408-411
Physical description
Dates
published
2005-02
received
2004-08-22
Contributors
author
  • Semiconductor Physics Institute, A. Goštauto 11, 2600 Vilnius, Lithuania
  • CEM2 - Centre d'Electronique et de Micro-optoelectronique de Montpellier, (CNRS UMR 5507) Université Montpellier II, 34095 Montpellier Cedex 5, France
author
  • Semiconductor Physics Institute, A. Goštauto 11, 2600 Vilnius, Lithuania
  • Semiconductor Physics Institute, A. Goštauto 11, 2600 Vilnius, Lithuania
author
  • CEM2 - Centre d'Electronique et de Micro-optoelectronique de Montpellier, (CNRS UMR 5507) Université Montpellier II, 34095 Montpellier Cedex 5, France
author
  • CEM2 - Centre d'Electronique et de Micro-optoelectronique de Montpellier, (CNRS UMR 5507) Université Montpellier II, 34095 Montpellier Cedex 5, France
author
  • CEM2 - Centre d'Electronique et de Micro-optoelectronique de Montpellier, (CNRS UMR 5507) Université Montpellier II, 34095 Montpellier Cedex 5, France
author
  • INFM - National Nanotechnology Laboratory, Dipartimento di Ingegneria, dell'Innovazione, Università di Lecce, via Arnesano s/n, 73100 Lecce, Italy
References
  • 1. S. Dhar, S. Ghosh, J. Appl. Phys, 86, 2668, 1999
  • 2. B. Foutz, S. O'Leary, M. Shur, L. Eastman, J. Appl. Phys, 85, 7727, 1999
  • 3. J.M. Barker, R. Akis, T.J. Thornton, D.K. Ferry, S.M. Goodnick, Phys. Status Solidi A, 190, 263, 2002
  • 4. E. Starikov, P. Shiktorov, V. Gruzinskis, L. Reggiani, L. Varani, J.C. Vaissière, Jian H. Zhao, J. Appl. Phys, 89, 1161, 2001
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv107n238kz
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