Theoretical Investigation of Large-Signal Noise in Nanometric Schottky-Barrier Diodes Operating in External Resonant Circuits

• Authors: P. Shiktorov , E. Starikov , V. Gružinskis , L. Varani , J. Vaissière , L. Reggiani , S. Pérez , T. González
• Languages of publication: EN

Abstracts

EN

We report Monte Carlo simulations of electronic noise in heavily doped nanometric GaAs Schottky-barrier diodes operating in series with a parallel resonant circuit when a high-frequency large-signal voltage is applied to the whole system. Significant modifications of the noise spectrum with respect to the unloaded diode are found to occur in the THz-region.

Keywords

EN

72.20.Ht; 72.30.+q; 72.70.+m

Discipline

• 72.70.+m: Noise processes and phenomena
• 72.20.Ht: High-field and nonlinear effects
• 72.30.+q: High-frequency effects; plasma effects

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2005
• Volume: 107
• Issue: 2
• Pages: 396-399

Dates

published

2005-02

received

2004-08-22

Contributors

author

P. Shiktorov

• Semiconductor Physics Institute, A. Goštauto 11, 2600 Vilnius, Lithuania

author

E. Starikov

• Semiconductor Physics Institute, A. Goštauto 11, 2600 Vilnius, Lithuania
• CEM2 - Centre d'Electronique et de Micro-optoelectronique de Montpellier (CNRS UMR 5507) Université Montpellier II, 34095 Montpellier Cedex 5, France

author

V. Gružinskis

• Semiconductor Physics Institute, A. Goštauto 11, 2600 Vilnius, Lithuania

author

L. Varani

• CEM2 - Centre d'Electronique et de Micro-optoelectronique de Montpellier (CNRS UMR 5507) Université Montpellier II, 34095 Montpellier Cedex 5, France

author

J. Vaissière

• CEM2 - Centre d'Electronique et de Micro-optoelectronique de Montpellier (CNRS UMR 5507) Université Montpellier II, 34095 Montpellier Cedex 5, France

author

L. Reggiani

• INFM - National Nanotechnology Laboratory, Dipartimento di Ingegneria, dell' Innovazione, Università di Lecce, Via Arnesano s/n, 73100 Lecce, Italy

author

S. Pérez

• Departamento de Física Aplicada, Universidad de Salamanca, Plaza de la Merced s/n, 37008 Salamanca, Spain

author

T. González

• Departamento de Física Aplicada, Universidad de Salamanca, Plaza de la Merced s/n, 37008 Salamanca, Spain

References

• 1. T.W. Crowe, J.L. Hesler, R.W. Weikle, S.H. Jones, Infrared Phys. Technol., 40, 175, 1999
• 2. P. Shiktorov, E. Starikov, V. Gruzinskis, S. P'erez, T. Gonz'alez, L. Reggiani, L. Varani, J.C. Vaissière, IEEE Electron Device Lett., 25, 1, 2004

Identifiers

DOI

10.12693/APhysPolA.107.396