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2005 | 107 | 2 | 381-387
Article title

Photoelectrical Properties of 1.3μm Emitting InAs Quantum Dots in InGaAs Matrix

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EN
Abstracts
EN
We present a study of photoelectrical properties of the Stranski-Krastanow InAs quantum dots embedded in an InGaAs matrix with low In content, emitting at about 1.3μm. The ground-state electron-hole transition of the dots was investigated as a function of the temperature in presence of electric fields parallel and perpendicular to the plane of the dots by photocurrent spectroscopy. Microphotoluminescence measurements were also carried out, allowing us to evidence carrier capture from the GaAs matrix into the dots.
Keywords
EN
Publisher

Year
Volume
107
Issue
2
Pages
381-387
Physical description
Dates
published
2005-02
received
2004-08-22
Contributors
author
  • CNR-IMM sez. di Lecce, via Arnesano, 73100 Lecce, Italy
  • Dipartimento di Ingegneria dell'Innovazione, Universitá degli Studi di Lecce, Lecce, Italy
author
  • CNR-IMM sez. di Lecce, via Arnesano, 73100 Lecce, Italy
author
  • Dipartimento di Ingegneria dell'Innovazione, Universitá degli Studi di Lecce, Lecce, Italy
author
  • CNR-ISMN, sez. di Roma, via Salaria Km 29,300, 00016 Monterotondo St., Roma, Italy
author
  • CNR-ISMN, sez. di Roma, via Salaria Km 29,300, 00016 Monterotondo St., Roma, Italy
author
  • CNR-ISMN, sez. di Roma, via Salaria Km 29,300, 00016 Monterotondo St., Roma, Italy
author
  • National Nanotechnology Laboratory-INFM, via Arnesano, 73100 Lecce, Italy
author
  • CNR-ISMN, sez. di Roma, via Salaria Km 29,300, 00016 Monterotondo St., Roma, Italy
References
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv107n233kz
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